"Layer-Filter Threshold" Technique for Near-Infrared Laser Ablation in Organic Semiconductor Device Processing
文献类型：期刊论文
| 作者 | Ye, Feng1,2,3; Chen, Zhaobin2; Zhao, Xiaoli1,2; Chen, Jiayue1,2,3; Yang, Xiaoniu1,2 |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2015-07-22 |
| 卷号 | 25期号:28页码:4453-4461 |
| 关键词 | device processing layer-filter near-infrared laser ablation self-alignment |
| 英文摘要 | Although conventional laser ablation (CLA) method has widely been used in patterning of organic semiconductor thin films, its quality control still remains unsatisfied due to the ambiguous photochemical and photothermal processes. Based on industrial available near-infrared laser source, herein, a novel layer-filter threshold (LFT) technique is proposed, which involves the decomposition of targeted layer-filter and subsequent explosive evaporation process to purge away the upper layers instead of layer-by-layer ablation. For photovoltaic device with structure of metal/blend/PEDOT:PSS/ITO/glass, the PEDOT:PSS layer as the layer-filter is first demonstrated to be effective, and then the merged P1-P2 line and metal electrode layer are readily patterned through the self-aligned effect and regulation of ablation direction, respectively. The correlation between laser fluence and explosive ablation efficacy is also investigated. Finally, photovoltaic modules based on classical P3HT:PC61BM and low-bandgap PBDT-TFQ:PC71BM systems are separately fabricated following the LFT technique. It is found that over 90% of geometric fill factor is achieved while device performances maintain in a limited change with increased number of series cells. In comparison to conventional laser ablation methods, the LFT technique does not require sophisticated instruments but reaches comparable processing accuracy, which shows promising potential in the fabrication and commercialization of organic semiconductor thin-film devices. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2015-10-27 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/27748]  |
| 专题 | 化学研究所_高分子物理与化学实验室 |
| 作者单位 | 1.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 2.Chinese Acad Sci, Changchun Inst Appl Chem, Polymer Composites Engn Lab, Changchun 130022, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ye, Feng,Chen, Zhaobin,Zhao, Xiaoli,et al. "Layer-Filter Threshold" Technique for Near-Infrared Laser Ablation in Organic Semiconductor Device Processing[J]. ADVANCED FUNCTIONAL MATERIALS,2015,25(28):4453-4461. |
| APA | Ye, Feng,Chen, Zhaobin,Zhao, Xiaoli,Chen, Jiayue,&Yang, Xiaoniu.(2015)."Layer-Filter Threshold" Technique for Near-Infrared Laser Ablation in Organic Semiconductor Device Processing.ADVANCED FUNCTIONAL MATERIALS,25(28),4453-4461. |
| MLA | Ye, Feng,et al.""Layer-Filter Threshold" Technique for Near-Infrared Laser Ablation in Organic Semiconductor Device Processing".ADVANCED FUNCTIONAL MATERIALS 25.28(2015):4453-4461. |
入库方式： OAI收割
来源：化学研究所
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