Controlled Synthesis of ZrS2 Mono layer and Few Layers on Hexagonal Boron Nitride
文献类型:期刊论文
作者 | Zhang, Mei1; Zhu, Yiming1,2; Wang, Xinsheng1; Feng, Qingliang1,3; Qiao, Shanlin1; Wen, Wen1; Chen, Yanfeng1; Cui, Menghua1; Zhang, Jin3; Cai, Congzhong2 |
刊名 | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
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出版日期 | 2015-06-10 |
卷号 | 137期号:22页码:7051-7054 |
英文摘要 | Group IVB transition metal (Zr and HO dichalcogenide (TMD) monolayers can have higher carrier mobility and higher tunneling current density than group VLB (Mo and W) TMD monolayers. Here we report the synthesis of hexagonal ZrS2 monolayer and few layers on hexagonal boron nitride (BN) using ZrCl4 and S as precursors. The domain size of ZrS2 hexagons is around 1-3 mu m. The number of layers of ZrS2 was controlled by tuning the evaporation temperature of ZrCl4. The stacking angle between ZrS, and BN characterized by transmission electron microscopy shows a preferred stacking angle of near 0 degrees. Field-effect transistors (FETs) fabricated on ZrS2 flakes showed n-type transport behavior with an estimated mobility of 0.1-1.1 cm(2) V-1 s(-1). |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-11-02 |
源URL | [http://ir.iccas.ac.cn/handle/121111/27994] ![]() |
专题 | 化学研究所_分子纳米结构与纳米技术实验室 |
作者单位 | 1.Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China 2.Chongqing Univ, Dept Appl Phys, Chongqing 401331, Peoples R China 3.Peking Univ, Beijing Natl Lab Mol Sci, Coll Chem & Mol Engn, Ctr Nanochem,Beijing Sci & Engn Ctr Nanocarbons, Beijing 100871, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, Mei,Zhu, Yiming,Wang, Xinsheng,et al. Controlled Synthesis of ZrS2 Mono layer and Few Layers on Hexagonal Boron Nitride[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2015,137(22):7051-7054. |
APA | Zhang, Mei.,Zhu, Yiming.,Wang, Xinsheng.,Feng, Qingliang.,Qiao, Shanlin.,...&Xie, Liming.(2015).Controlled Synthesis of ZrS2 Mono layer and Few Layers on Hexagonal Boron Nitride.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,137(22),7051-7054. |
MLA | Zhang, Mei,et al."Controlled Synthesis of ZrS2 Mono layer and Few Layers on Hexagonal Boron Nitride".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 137.22(2015):7051-7054. |
入库方式: OAI收割
来源:化学研究所
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