Study on carbon deposition of CH4, C2H6 and C2H4 cracking over Ni-based catalysts
文献类型：期刊论文
| 作者 | Yang, YL; Xu, HY; Li, WZ |
| 刊名 | acta physico-chimica sinica
 |
| 出版日期 | 2001-09-01 |
| 卷号 | 17期号:9页码:773-775 |
| 关键词 | methane ethane ethylene nickel catalyst metal-semiconductor interaction |
| 英文摘要 | influence of the additions of different type semiconductor oxides to ni-based catalyst on the characteristics of carbon deposition of ch4, c2h6 and c2h4 cracking was studied by using pulse microreaction technique. it was discovered that, the addition of n-type semiconductor ceo2 to ni catalyst would decrease carbon deposition activity of ch4 and c2h6 cracking, whereas the addition of p-type semiconductor co3o4 would increase carbon deposition activity of ch4 and c2h6 cracking. on the other hand, the effect of semiconductor oxide additives on the characteristics of carbon deposition of c2h4 cracking is opposite to that of ch4 and c2h6 due to the different activated mechanism. xps results reveal that there is a metal-semiconductor interaction (msci) between active metal ni and semiconductor oxide, which is the most important factor leads to the above phenomenon. |
| WOS标题词 | science & technology ; physical sciences |
| 类目[WOS] | chemistry, physical |
| 研究领域[WOS] | chemistry |
| 关键词[WOS] | methane ; selectivity |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000171302100002 |
| 公开日期 | 2015-11-10 |
| 源URL | [http://159.226.238.44/handle/321008/139023]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 作者单位 | Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, YL,Xu, HY,Li, WZ. Study on carbon deposition of CH4, C2H6 and C2H4 cracking over Ni-based catalysts[J]. acta physico-chimica sinica,2001,17(9):773-775. |
| APA | Yang, YL,Xu, HY,&Li, WZ.(2001).Study on carbon deposition of CH4, C2H6 and C2H4 cracking over Ni-based catalysts.acta physico-chimica sinica,17(9),773-775. |
| MLA | Yang, YL,et al."Study on carbon deposition of CH4, C2H6 and C2H4 cracking over Ni-based catalysts".acta physico-chimica sinica 17.9(2001):773-775. |
入库方式： OAI收割
来源：大连化学物理研究所
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