Deposition of high quality TiN thin films with nano-structure
文献类型:期刊论文
作者 | Yan, PX; Wu, ZG; Xu, JW; Zhang, YJ; Zhang, WW; Liu, WM |
刊名 | journal of inorganic materials |
出版日期 | 2004-11-01 |
卷号 | 19期号:6页码:1386-1390 |
关键词 | TiN filtered cathode arc plasma nano-thin films |
英文摘要 | nano-structure tin thin films with excellent properties were deposited on the silicon wafer and stainless steel substrate under room temperature by a filtered cathode arc plasma technique. the structure and morphology of the films were characterized by atomic force microscopy (afm) and small angle x-ray diffractometer (xrd), and it's hardness and elastic mouldness were measured by nano-indenter. research results show that the tin thin. films are highly uniform, very smooth, dense and droplet-phase-free. the average grain size of the films is 50nm, and it's hardness is up to 50gpa that is about two times of that deposited by conventional cvd and pvd techniques. xrd analysis demonstrates that the diffraction peaks of the tin films move to small angle, and the films display a preferred orientation along plane (111). |
WOS标题词 | science & technology ; technology |
类目[WOS] | materials science, ceramics |
研究领域[WOS] | materials science |
关键词[WOS] | plasma |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000225444000026 |
公开日期 | 2015-11-10 |
源URL | [http://159.226.238.44/handle/321008/139477] |
专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
作者单位 | 1.Lanzhou Univ, Inst Plasma & Met Mat, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst Chem Phys, State Key Lab Solid Lubr, Lanzhou 730000, Peoples R China |
推荐引用方式 GB/T 7714 | Yan, PX,Wu, ZG,Xu, JW,et al. Deposition of high quality TiN thin films with nano-structure[J]. journal of inorganic materials,2004,19(6):1386-1390. |
APA | Yan, PX,Wu, ZG,Xu, JW,Zhang, YJ,Zhang, WW,&Liu, WM.(2004).Deposition of high quality TiN thin films with nano-structure.journal of inorganic materials,19(6),1386-1390. |
MLA | Yan, PX,et al."Deposition of high quality TiN thin films with nano-structure".journal of inorganic materials 19.6(2004):1386-1390. |
入库方式: OAI收割
来源:大连化学物理研究所
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