中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Deposition of high quality TiN thin films with nano-structure

文献类型:期刊论文

作者Yan, PX; Wu, ZG; Xu, JW; Zhang, YJ; Zhang, WW; Liu, WM
刊名journal of inorganic materials
出版日期2004-11-01
卷号19期号:6页码:1386-1390
关键词TiN filtered cathode arc plasma nano-thin films
英文摘要nano-structure tin thin films with excellent properties were deposited on the silicon wafer and stainless steel substrate under room temperature by a filtered cathode arc plasma technique. the structure and morphology of the films were characterized by atomic force microscopy (afm) and small angle x-ray diffractometer (xrd), and it's hardness and elastic mouldness were measured by nano-indenter. research results show that the tin thin. films are highly uniform, very smooth, dense and droplet-phase-free. the average grain size of the films is 50nm, and it's hardness is up to 50gpa that is about two times of that deposited by conventional cvd and pvd techniques. xrd analysis demonstrates that the diffraction peaks of the tin films move to small angle, and the films display a preferred orientation along plane (111).
WOS标题词science & technology ; technology
类目[WOS]materials science, ceramics
研究领域[WOS]materials science
关键词[WOS]plasma
收录类别SCI
语种英语
WOS记录号WOS:000225444000026
公开日期2015-11-10
源URL[http://159.226.238.44/handle/321008/139477]  
专题大连化学物理研究所_中国科学院大连化学物理研究所
作者单位1.Lanzhou Univ, Inst Plasma & Met Mat, Lanzhou 730000, Peoples R China
2.Chinese Acad Sci, Inst Chem Phys, State Key Lab Solid Lubr, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Yan, PX,Wu, ZG,Xu, JW,et al. Deposition of high quality TiN thin films with nano-structure[J]. journal of inorganic materials,2004,19(6):1386-1390.
APA Yan, PX,Wu, ZG,Xu, JW,Zhang, YJ,Zhang, WW,&Liu, WM.(2004).Deposition of high quality TiN thin films with nano-structure.journal of inorganic materials,19(6),1386-1390.
MLA Yan, PX,et al."Deposition of high quality TiN thin films with nano-structure".journal of inorganic materials 19.6(2004):1386-1390.

入库方式: OAI收割

来源:大连化学物理研究所

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