Dissociative adsorption of methylsilane on the Si(100)-2 x 1 surface
文献类型：期刊论文
| 作者 | Qu, YQ; Li, J; Han, KL |
| 刊名 | journal of physical chemistry b
 |
| 出版日期 | 2004-09-30 |
| 卷号 | 108期号:39页码:15103-15109 |
| 英文摘要 | density functional theory calculations have been used to investigate the mechanisms of dissociative adsorption of methylsilane (ch3sih3) on the si(100)-2 x 1 surface. three different reaction pathways via si-h, c-h, and si-c dissociation are used to describe the formation of -sih2ch3, -ch2sih3, -ch3, -sih3, and -h fragments adsorbed on the dimer dangling bonds. the geometry, energetics, and vibration properties of the critical points along the potential energy surface using the si9h12 one-dimer and si15h16 two-dimer cluster models are investigated. our results indicate that the product of si-h dissociation is the dominating dissociative product. the results also show that methylsilane is a good candidate for the growth of sic films. |
| WOS标题词 | science & technology ; physical sciences |
| 类目[WOS] | chemistry, physical |
| 研究领域[WOS] | chemistry |
| 关键词[WOS] | chemical-vapor-deposition ; density-functional theory ; silicon-carbide ; semiconductor surfaces ; thin-films ; growth ; decomposition ; silane ; si ; cvd |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000224070200047 |
| 公开日期 | 2015-11-10 |
| 源URL | [http://159.226.238.44/handle/321008/139542]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 作者单位 | Chinese Acad Sci, Dalian Inst Chem Phys, Ctr Computat Chem, Dalian 116023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Qu, YQ,Li, J,Han, KL. Dissociative adsorption of methylsilane on the Si(100)-2 x 1 surface[J]. journal of physical chemistry b,2004,108(39):15103-15109. |
| APA | Qu, YQ,Li, J,&Han, KL.(2004).Dissociative adsorption of methylsilane on the Si(100)-2 x 1 surface.journal of physical chemistry b,108(39),15103-15109. |
| MLA | Qu, YQ,et al."Dissociative adsorption of methylsilane on the Si(100)-2 x 1 surface".journal of physical chemistry b 108.39(2004):15103-15109. |
入库方式： OAI收割
来源：大连化学物理研究所
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