中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Theoretical investigations on CH2=CH-CH2OH on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces

文献类型:期刊论文

作者Li, J; Qu, YQ; Han, KL; He, GZ
刊名surface science
出版日期2005-07-20
卷号586期号:1-3页码:45-55
关键词functionalization dissociation dimers rearrangement
英文摘要density functional theory simulations with cluster model are performed to investigate the reaction mechanism of ch2=ch-ch2oh on the bare si(100)-2 x 1 and ge(10 0)-2 x i surfaces and probe the factors that control the competition and selectivity of organic functionalization on the clean semiconductor surfaces. our calculations indicate that the reaction pathway via o-h dissociation is favored in kinetic factors on the si(i 0 0)-2 x i and the ge(i 0 0)-2 x i surfaces. the dissociation can occur on a single dimer or across two adjacent dimers along a dimer row. some candidate rearrangements after the dissociation of o-h bond on the si(i 00)-2 x i surface are also described. (c) 2005 elsevier b.v. all rights reserved.
WOS标题词science & technology ; physical sciences
类目[WOS]chemistry, physical ; physics, condensed matter
研究领域[WOS]chemistry ; physics
关键词[WOS]density-functional theory ; high-resolution photoemission ; diels-alder reactions ; cycloaddition chemistry ; dissociative adsorption ; semiconductor surfaces ; silicon surfaces ; first-principles ; si-c ; decomposition
收录类别SCI
语种英语
WOS记录号WOS:000230290700005
公开日期2015-11-10
源URL[http://159.226.238.44/handle/321008/139611]  
专题大连化学物理研究所_中国科学院大连化学物理研究所
作者单位Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
推荐引用方式
GB/T 7714
Li, J,Qu, YQ,Han, KL,et al. Theoretical investigations on CH2=CH-CH2OH on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces[J]. surface science,2005,586(1-3):45-55.
APA Li, J,Qu, YQ,Han, KL,&He, GZ.(2005).Theoretical investigations on CH2=CH-CH2OH on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces.surface science,586(1-3),45-55.
MLA Li, J,et al."Theoretical investigations on CH2=CH-CH2OH on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces".surface science 586.1-3(2005):45-55.

入库方式: OAI收割

来源:大连化学物理研究所

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