High-quality GaN grown by gas-source MBE
文献类型：期刊论文
| 作者 | Wang, JX; Sun, DZ; Wang, XL; Li, JM; Zeng, YP; Hou, X; Lin, LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001-07-01 |
| 卷号 | 227页码:386-389 |
| 关键词 | characterization molecular beam epitaxy gallium compounds nitrides piezoelectric materials semiconducting gallium compounds |
| 英文摘要 | high-quality gan epilayers were consistently obtained using a home-made gas-sourer mbe system on sapphire substrates. room-temperature electron mobility of the grown gan film is 300 cm(2)/v s with a background electron concentration as low as 2 x 10(17) cm(-3) the full-width at half-maximum of the gan (0 0 0 2) double-crystal x-ray rocking curve is 6 arcmin. at low temperature (3.5 k), the fwhm of the: near-band-edge photoluminescence emission line is 10 mev. furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a gan/aln/gan/sapphire structure. its room-temperature and low-temperature (77 k) electron mobility is 680 cm(2)/v s and 1700 cm(2)/v s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (c) 2001 published by elsevier science. |
| WOS标题词 | science & technology ; physical sciences ; technology |
| 类目[WOS] | crystallography ; materials science, multidisciplinary ; physics, applied |
| 研究领域[WOS] | crystallography ; materials science ; physics |
| 关键词[WOS] | molecular-beam epitaxy ; heterostructures ; sapphire ; diodes |
| 收录类别 | SCI ; EI ; ISTP |
| 语种 | 英语 |
| WOS记录号 | WOS:000169557600076 |
| 公开日期 | 2015-11-10 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/25427]  |
| 专题 | 西安光学精密机械研究所_中国科学院西安光学精密机械研究所(2010年前) |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian 710068, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, JX,Sun, DZ,Wang, XL,et al. High-quality GaN grown by gas-source MBE[J]. journal of crystal growth,2001,227:386-389. |
| APA | Wang, JX.,Sun, DZ.,Wang, XL.,Li, JM.,Zeng, YP.,...&Lin, LY.(2001).High-quality GaN grown by gas-source MBE.journal of crystal growth,227,386-389. |
| MLA | Wang, JX,et al."High-quality GaN grown by gas-source MBE".journal of crystal growth 227(2001):386-389. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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