Investigation of high-power sub-nanosecond GaAs photoconductive switches
文献类型：期刊论文
| 作者 | Shi, W; Zhao, W ; Zhang, XB; Li, EL
|
| 刊名 | acta physica sinica
 |
| 出版日期 | 2002-04-01 |
| 卷号 | 51期号:4页码:867-872 |
| 关键词 | photoconductive semiconductor switches lock-on effect high power ultra-fast electrical pulse |
| 其他题名 | 高功率亚纳秒gaas光电导开关的研究 |
| 英文摘要 | experiments of an all-solid-state insulated lateral semi-insulating gaas photoconductive semiconductor switch(pcss) triggered by nano-second and pico-second laser pulses are reported. both linear and nonlinear modes of the 3 mm-gap and 8 mm-gap gaas pcss was observed when triggered by a nano-second laser. the current could be as high as 560a. the same device also revealed good temporal characteristics when trigger with a pico-second laser. the rising time of the pcss response is less than 200ps, which is limited by the coaxial cable. |
| WOS标题词 | science & technology ; physical sciences |
| 类目[WOS] | physics, multidisciplinary |
| 研究领域[WOS] | physics |
| 收录类别 | SCI ; EI |
| 语种 | 中文 |
| WOS记录号 | WOS:000174952500031 |
| 公开日期 | 2015-11-17 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/25450]  |
| 专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
| 作者单位 | 1.Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China 2.Chinese Acad Sci, State Key Lab Transient Opt & Technol, Xian Inst Opt & Fine Mech, Xian 710068, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shi, W,Zhao, W,Zhang, XB,et al. Investigation of high-power sub-nanosecond GaAs photoconductive switches[J]. acta physica sinica,2002,51(4):867-872. |
| APA | Shi, W,Zhao, W,Zhang, XB,&Li, EL.(2002).Investigation of high-power sub-nanosecond GaAs photoconductive switches.acta physica sinica,51(4),867-872. |
| MLA | Shi, W,et al."Investigation of high-power sub-nanosecond GaAs photoconductive switches".acta physica sinica 51.4(2002):867-872. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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