中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation of high-power sub-nanosecond GaAs photoconductive switches

文献类型:期刊论文

作者Shi, W; Zhao, W; Zhang, XB; Li, EL
刊名acta physica sinica
出版日期2002-04-01
卷号51期号:4页码:867-872
关键词photoconductive semiconductor switches lock-on effect high power ultra-fast electrical pulse
其他题名高功率亚纳秒gaas光电导开关的研究
英文摘要experiments of an all-solid-state insulated lateral semi-insulating gaas photoconductive semiconductor switch(pcss) triggered by nano-second and pico-second laser pulses are reported. both linear and nonlinear modes of the 3 mm-gap and 8 mm-gap gaas pcss was observed when triggered by a nano-second laser. the current could be as high as 560a. the same device also revealed good temporal characteristics when trigger with a pico-second laser. the rising time of the pcss response is less than 200ps, which is limited by the coaxial cable.
WOS标题词science & technology ; physical sciences
类目[WOS]physics, multidisciplinary
研究领域[WOS]physics
收录类别SCI ; EI
语种中文
WOS记录号WOS:000174952500031
公开日期2015-11-17
源URL[http://ir.opt.ac.cn/handle/181661/25450]  
专题西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位1.Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China
2.Chinese Acad Sci, State Key Lab Transient Opt & Technol, Xian Inst Opt & Fine Mech, Xian 710068, Peoples R China
推荐引用方式
GB/T 7714
Shi, W,Zhao, W,Zhang, XB,et al. Investigation of high-power sub-nanosecond GaAs photoconductive switches[J]. acta physica sinica,2002,51(4):867-872.
APA Shi, W,Zhao, W,Zhang, XB,&Li, EL.(2002).Investigation of high-power sub-nanosecond GaAs photoconductive switches.acta physica sinica,51(4),867-872.
MLA Shi, W,et al."Investigation of high-power sub-nanosecond GaAs photoconductive switches".acta physica sinica 51.4(2002):867-872.

入库方式: OAI收割

来源:西安光学精密机械研究所

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