Effects of ion implantation on the structure of nano-Si3N4
文献类型：期刊论文
| 作者 | Tu, XH; Li, DH; Zhao, HZ; Zhan, MS |
| 刊名 | JOURNAL OF INORGANIC MATERIALS
 |
| 出版日期 | 2001-03-01 |
| 卷号 | 16期号:2页码:369-372 |
| 关键词 | quantum confinement unstability of photoluminescence ion implantation nano-Si3N4 |
| 英文摘要 | The effects of ion implantation on the structure of nano-Si3N4 was studied by means of FT-IR, XPS and photoluminescence spectra. The energy level scheme and the energy structure of nano-Si3N4 were given. The results show that ion implantation makes free Si in the material change to SiNn(n=1, 2), and nano-Si3N4 possesses a quantum confinement effect, and its photoluminescence peak position and intensity are unstable. |
| WOS标题词 | Science & Technology ; Technology |
| 类目[WOS] | Materials Science, Ceramics |
| 研究领域[WOS] | Materials Science |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000167638500029 |
| 公开日期 | 2015-12-08 |
| 源URL | [http://ir.wipm.ac.cn/handle/112942/8650]  |
| 专题 | 武汉物理与数学研究所_2011年以前论文发表（包括2011年） |
| 作者单位 | 1.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Hefei 230031, Peoples R China 2.Chinese Acad Sci, Wuhan Inst Phys & Math, State Key Lab Magnet Resonance & Atom & Mol Phys, Wuhan 430071, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tu, XH,Li, DH,Zhao, HZ,et al. Effects of ion implantation on the structure of nano-Si3N4[J]. JOURNAL OF INORGANIC MATERIALS,2001,16(2):369-372. |
| APA | Tu, XH,Li, DH,Zhao, HZ,&Zhan, MS.(2001).Effects of ion implantation on the structure of nano-Si3N4.JOURNAL OF INORGANIC MATERIALS,16(2),369-372. |
| MLA | Tu, XH,et al."Effects of ion implantation on the structure of nano-Si3N4".JOURNAL OF INORGANIC MATERIALS 16.2(2001):369-372. |
入库方式： OAI收割
来源：武汉物理与数学研究所
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