Thermoelectric Properties of Amorphous Zr-Ni-Sn Thin Films Deposited by Magnetron Sputtering
文献类型：期刊论文
| 作者 | Zhou, Yang1; Tan, Qing1; Zhu, Jie2; Li, Siyang1; Liu, Chenjin1; Lei, Yuxiong1; Li, Liangliang1 |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2015-06-01 |
| 卷号 | 44期号:6页码:1957-1962 |
| 关键词 | Zr-Ni-Sn thin films amorphous structure magnetron sputtering thermoelectric properties |
| 英文摘要 | n-Type Zr-Ni-Sn thermoelectric thin films with thickness of 60 nm to 400 nm were deposited by radiofrequency magnetron sputtering. The microstructure of the Zr-Ni-Sn thin films was examined by x-ray diffractometry and high-resolution transmission electron microscopy, revealing an amorphous microstructure. The thermal conductivity of the amorphous films was measured by the ultrafast laser pump-probe thermoreflectance technique, revealing values of 1.4 W m(-1) K-1 to 2.2 W m(-1) K-1, smaller than that of bulk material because of the amorphous microstructure of the films. The effects of the sputtering power on the composition, Seebeck coefficient, and electrical conductivity of the films were investigated. The largest Seebeck coefficient and power factor were achieved at 393 K, being -112.0 mu V K-1 and 2.66 mW K-2 m(-1), respectively. The low thermal conductivity and high power factor indicate that amorphous Zr-Ni-Sn thin films could be a promising material for use in thermoelectric microdevices. |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| 类目[WOS] | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Engineering ; Materials Science ; Physics |
| 关键词[WOS] | HALF-HEUSLER COMPOUNDS ; TRANSPORT-PROPERTIES ; POWER ; PERFORMANCE ; FIGURE ; NIMNSB ; MERIT |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000353813700085 |
| 公开日期 | 2015-12-22 |
| 源URL | [http://ir.etp.ac.cn/handle/311046/98919]  |
| 专题 | 工程热物理研究所_中国科学院工程热物理所（论文库）_期刊论文（SCI） |
| 作者单位 | 1.Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China 2.Chinese Acad Sci, Inst Engn Thermophys, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Yang,Tan, Qing,Zhu, Jie,et al. Thermoelectric Properties of Amorphous Zr-Ni-Sn Thin Films Deposited by Magnetron Sputtering[J]. JOURNAL OF ELECTRONIC MATERIALS,2015,44(6):1957-1962. |
| APA | Zhou, Yang.,Tan, Qing.,Zhu, Jie.,Li, Siyang.,Liu, Chenjin.,...&Li, Liangliang.(2015).Thermoelectric Properties of Amorphous Zr-Ni-Sn Thin Films Deposited by Magnetron Sputtering.JOURNAL OF ELECTRONIC MATERIALS,44(6),1957-1962. |
| MLA | Zhou, Yang,et al."Thermoelectric Properties of Amorphous Zr-Ni-Sn Thin Films Deposited by Magnetron Sputtering".JOURNAL OF ELECTRONIC MATERIALS 44.6(2015):1957-1962. |
入库方式： OAI收割
来源：工程热物理研究所
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