Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers
文献类型：期刊论文
| 作者 | Ren Sheng-Dong1,2; Li Bin-Cheng1; Gao Li-Feng1; Wang Qian1,2 |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2013-05-01 |
| 卷号 | 22期号:5 |
| 关键词 | photocarrier radiometry ion implantation effective lifetime silicon |
| 英文摘要 | A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B+, P+, and As+ ion implantation at doses ranging from 1x10(11) cm(-2) to 1x10(16) cm(-2). The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 关键词[WOS] | LIGHT-EMITTING-DIODES ; DISLOCATION LOOPS ; BORON ; DIFFUSION ; SI |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000319498300072 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/1184]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ren Sheng-Dong,Li Bin-Cheng,Gao Li-Feng,et al. Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers[J]. CHINESE PHYSICS B,2013,22(5). |
| APA | Ren Sheng-Dong,Li Bin-Cheng,Gao Li-Feng,&Wang Qian.(2013).Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers.CHINESE PHYSICS B,22(5). |
| MLA | Ren Sheng-Dong,et al."Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers".CHINESE PHYSICS B 22.5(2013). |
入库方式： OAI收割
来源：光电技术研究所
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