Optical and photo-carrier characterization of ultra-shallow junctions in silicon
文献类型：期刊论文
| 作者 | Huang QiuPing1,2; Li BinCheng1; Ren ShengDong1,2 |
| 刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
 |
| 出版日期 | 2013-07-01 |
| 卷号 | 56期号:7页码:1294-1300 |
| 关键词 | photocarrier radiometry spectroscopic ellipsometry photoluminescence ultra-shallow junctions silicon |
| 英文摘要 | Spectroscopic ellipsometry (SE), photocarrier radiometry (PCR) and photoluminescence (PL) techniques were employed to measure the ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5-5 keV, at a dose of 1x10(15) As+/cm(2) and spike annealing. Experimentally the damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 to 20 mu m. The PCR amplitude decreased monotonically with the increasing implantation energy. The experimental results also showed that the PCR amplitudes of post-annealed USJ wafers were greatly enhanced, compared to the non-implanted and non-annealed substrate wafer. The PL measurements showed the enhanced PCR signals were attributed to the band-edge emissions of silicon. For explaining the PL enhancement, the electronic transport properties of USJ wafers were extracted via multi-wavelength PCR experiment and fitting. The fitted results showed the decreasing surface recombination velocity and the decreasing diffusion coefficient of the implanted layer contributed to the PCR signal enhancement with the decreasing implantation energy. SE, PCR and PL were proven to be non-destructive metrology tools for characterizing ultra-shallow junctions. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 关键词[WOS] | ROOM-TEMPERATURE |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000320502800009 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/1240]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang QiuPing,Li BinCheng,Ren ShengDong. Optical and photo-carrier characterization of ultra-shallow junctions in silicon[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2013,56(7):1294-1300. |
| APA | Huang QiuPing,Li BinCheng,&Ren ShengDong.(2013).Optical and photo-carrier characterization of ultra-shallow junctions in silicon.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,56(7),1294-1300. |
| MLA | Huang QiuPing,et al."Optical and photo-carrier characterization of ultra-shallow junctions in silicon".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 56.7(2013):1294-1300. |
入库方式： OAI收割
来源：光电技术研究所
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