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Engineering heavily doped silicon for broadband absorber in the terahertz regime

文献类型:期刊论文

作者Pu, Mingbo; Wang, Min; Hu, Chenggang; Huang, Cheng; Zhao, Zeyu; Wang, Yanqin; Luo, Xiangang
刊名OPTICS EXPRESS
出版日期2012-11-05
卷号20期号:23页码:25513-25519
英文摘要Highly efficient absorber is of particular importance in terahertz regime as naturally occurring materials with frequency-selective absorption in this frequency band is difficult to find. Here we present the design and characterization of a broadband terahertz absorber based on heavily Boron-doped silicon (0.7676 Omega cm) grating. It is numerically demonstrated by utilizing both the zero- and first order diffraction in the doped silicon wafer, relative absorption bandwidth larger than 100% can be achieved. Furthermore, the design can be easily extended to higher frequencies as the optical property of doped silicon is tunable through changing the doping concentration. (c) 2012 Optical Society of America
WOS标题词Science & Technology ; Physical Sciences
类目[WOS]Optics
研究领域[WOS]Optics
关键词[WOS]METAMATERIAL ABSORBER ; PERFECT ABSORBER ; ABSORPTION ; DESIGN ; SURFACE ; FILM
收录类别SCI
语种英语
WOS记录号WOS:000311340300060
公开日期2015-12-24
源URL[http://ir.ioe.ac.cn/handle/181551/2360]  
专题光电技术研究所_光电技术研究所被WoS收录文章
作者单位Chinese Acad Sci, State Key Lab Opt Technol Microfabricat, Inst Opt & Elect, Chengdu 610209, Peoples R China
推荐引用方式
GB/T 7714
Pu, Mingbo,Wang, Min,Hu, Chenggang,et al. Engineering heavily doped silicon for broadband absorber in the terahertz regime[J]. OPTICS EXPRESS,2012,20(23):25513-25519.
APA Pu, Mingbo.,Wang, Min.,Hu, Chenggang.,Huang, Cheng.,Zhao, Zeyu.,...&Luo, Xiangang.(2012).Engineering heavily doped silicon for broadband absorber in the terahertz regime.OPTICS EXPRESS,20(23),25513-25519.
MLA Pu, Mingbo,et al."Engineering heavily doped silicon for broadband absorber in the terahertz regime".OPTICS EXPRESS 20.23(2012):25513-25519.

入库方式: OAI收割

来源:光电技术研究所

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