Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry
文献类型：期刊论文
| 作者 | Huang, Qiuping1,2; Li, Bincheng1; Gao, Weidong1 |
| 刊名 | INTERNATIONAL JOURNAL OF THERMOPHYSICS
 |
| 出版日期 | 2012-11-01 |
| 卷号 | 33期号:10-11页码:2082-2088 |
| 关键词 | Ion implantation Photocarrier radiometry Silicon Spectroscopic ellipsometry Ultra-shallow junction |
| 英文摘要 | Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 x 10(15) As+/cm(2) and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 mu m to 20 mu m. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied |
| 研究领域[WOS] | Thermodynamics ; Chemistry ; Mechanics ; Physics |
| 收录类别 | SCI ; ISTP |
| 语种 | 英语 |
| WOS记录号 | WOS:000312072300046 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/2371]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, Qiuping,Li, Bincheng,Gao, Weidong. Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2012,33(10-11):2082-2088. |
| APA | Huang, Qiuping,Li, Bincheng,&Gao, Weidong.(2012).Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry.INTERNATIONAL JOURNAL OF THERMOPHYSICS,33(10-11),2082-2088. |
| MLA | Huang, Qiuping,et al."Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry".INTERNATIONAL JOURNAL OF THERMOPHYSICS 33.10-11(2012):2082-2088. |
入库方式： OAI收割
来源：光电技术研究所
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