Analysis of Enhanced Photocarrier Radiometry Signals for Ion-Implanted and Annealed Silicon Wafers
文献类型：期刊论文
| 作者 | Liu, Xianming1,2; Li, Bincheng2; Huang, Qiuping2 |
| 刊名 | INTERNATIONAL JOURNAL OF THERMOPHYSICS
 |
| 出版日期 | 2012-11-01 |
| 卷号 | 33期号:10-11页码:2089-2094 |
| 关键词 | Ion implantation Photocarrier radiometry Quantum efficiency Thermal annealing |
| 英文摘要 | It is experimentally observed that the photocarrier radiometry (PCR) signals of silicon wafers are greatly enhanced by ion implantation and thermal annealing. A two-layer theoretical model is employed to analyze the experimental observation in detail. Theoretical simulations indicate that the increased optical-to-electronic quantum efficiency of the implanted layer could be the main photoluminescence mechanism contributing to the PCR signal enhancement. The decreased surface recombination velocity induced by surface electric field and the change of electronic transport properties of the implanted layer also contribute to the signal enhancement. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied |
| 研究领域[WOS] | Thermodynamics ; Chemistry ; Mechanics ; Physics |
| 关键词[WOS] | ROOM-TEMPERATURE ; LUMINESCENCE ; DIODES ; DEFECT |
| 收录类别 | SCI ; ISTP |
| 语种 | 英语 |
| WOS记录号 | WOS:000312072300047 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/2389]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Chongqing Univ, Key Lab Optoelect Technol & Syst, Educ Minist China, Chongqing 400044, Peoples R China 2.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Xianming,Li, Bincheng,Huang, Qiuping. Analysis of Enhanced Photocarrier Radiometry Signals for Ion-Implanted and Annealed Silicon Wafers[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2012,33(10-11):2089-2094. |
| APA | Liu, Xianming,Li, Bincheng,&Huang, Qiuping.(2012).Analysis of Enhanced Photocarrier Radiometry Signals for Ion-Implanted and Annealed Silicon Wafers.INTERNATIONAL JOURNAL OF THERMOPHYSICS,33(10-11),2089-2094. |
| MLA | Liu, Xianming,et al."Analysis of Enhanced Photocarrier Radiometry Signals for Ion-Implanted and Annealed Silicon Wafers".INTERNATIONAL JOURNAL OF THERMOPHYSICS 33.10-11(2012):2089-2094. |
入库方式： OAI收割
来源：光电技术研究所
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