Accuracy Improvement of Multi-parameter Estimation in Combined Photocarrier Radiometry and Free Carrier Absorption for Characterization of Silicon Wafers
文献类型：期刊论文
| 作者 | Huang, Qiuping1,2; Li, Bincheng1; Ren, Shengdong1,2 |
| 刊名 | INTERNATIONAL JOURNAL OF THERMOPHYSICS
 |
| 出版日期 | 2012-11-01 |
| 卷号 | 33期号:10-11页码:2076-2081 |
| 关键词 | Electronic transport properties Free carrier absorption Multi-parameter fitting Photocarrier radiometry Silicon |
| 英文摘要 | Numerical simulations are performed to investigate the effect of experimental parameters on the simultaneous determination of the electronic transport properties (namely, the carrier lifetime, the carrier diffusion coefficient, and the surface recombination velocities) of semiconductor wafers in the combined photocarrier radiometry (PCR) and free carrier absorption (FCA) technique via a multi-parameter estimation procedure. The uncertainties of the fitted parameter values are analyzed by investigating the dependence of a mean square variance including both amplitude and phase errors on the corresponding transport parameters. Simulation results show that the optimal experimental conditions with a combination of an appropriate pump-probe-beam separation and a small (comparable to or slightly larger than the pump beam radius) detection radius in FCA, as well as a large (1 mm) detection radius in PCR, can noticeably reduce the uncertainties of the simultaneously fitted transport properties of wafers. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied |
| 研究领域[WOS] | Thermodynamics ; Chemistry ; Mechanics ; Physics |
| 关键词[WOS] | TRANSPORT-PROPERTIES |
| 收录类别 | SCI ; ISTP |
| 语种 | 英语 |
| WOS记录号 | WOS:000312072300045 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/2395]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, Qiuping,Li, Bincheng,Ren, Shengdong. Accuracy Improvement of Multi-parameter Estimation in Combined Photocarrier Radiometry and Free Carrier Absorption for Characterization of Silicon Wafers[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2012,33(10-11):2076-2081. |
| APA | Huang, Qiuping,Li, Bincheng,&Ren, Shengdong.(2012).Accuracy Improvement of Multi-parameter Estimation in Combined Photocarrier Radiometry and Free Carrier Absorption for Characterization of Silicon Wafers.INTERNATIONAL JOURNAL OF THERMOPHYSICS,33(10-11),2076-2081. |
| MLA | Huang, Qiuping,et al."Accuracy Improvement of Multi-parameter Estimation in Combined Photocarrier Radiometry and Free Carrier Absorption for Characterization of Silicon Wafers".INTERNATIONAL JOURNAL OF THERMOPHYSICS 33.10-11(2012):2076-2081. |
入库方式： OAI收割
来源：光电技术研究所
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