Nanochannel fabrication by imprinting-induced cracks
文献类型:期刊论文
| 作者 | Xia, Liangping1,2; Zhang, Man2; Yang, Zheng1; Cui, Hongliang1; Yin, Shaoyun1; Hu, Song2; Du, Chunlei1 |
| 刊名 | APPLIED PHYSICS LETTERS
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| 出版日期 | 2014-02-17 |
| 卷号 | 104期号:7 |
| 英文摘要 | A simple and low-cost process of imprinting-induced cracks is proposed to fabricate controllable nanochannel structures with high depth-to-width ratio, in ultraviolet (UV) curable photoresist. The nanochannels are formed by the cracks of UV-curable photoresist due to its volume reduction as a result of solidification, with imprinting induced predesigned crack patterns. The proposed process is demonstrated with a nanochannel structure consisting of a periodically distributed hexagonal 30 nm-width and 100 nm-depth channels, which is fabricated by anodic aluminum oxide template imprinting induced cracks on a thiolene UV-curable photoresist. A finite element analysis provided theoretical foundation for the process, shedding lights on the parameters influencing the process. (C) 2014 AIP Publishing LLC. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Physics, Applied |
| 研究领域[WOS] | Physics |
| 关键词[WOS] | RESTORATIONS ; FILM |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000332038500056 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/2489] ![]() |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Chinese Acad Sci, Key Lab Multiscale Mfg Technol, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 2.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xia, Liangping,Zhang, Man,Yang, Zheng,et al. Nanochannel fabrication by imprinting-induced cracks[J]. APPLIED PHYSICS LETTERS,2014,104(7). |
| APA | Xia, Liangping.,Zhang, Man.,Yang, Zheng.,Cui, Hongliang.,Yin, Shaoyun.,...&Du, Chunlei.(2014).Nanochannel fabrication by imprinting-induced cracks.APPLIED PHYSICS LETTERS,104(7). |
| MLA | Xia, Liangping,et al."Nanochannel fabrication by imprinting-induced cracks".APPLIED PHYSICS LETTERS 104.7(2014). |
入库方式: OAI收割
来源:光电技术研究所
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