中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Deformation verification and surface improvement of active stressed lap for 4 m-class primary mirror fabrication

文献类型:期刊论文

作者Zhao, Hongshen1,2; Li, Xiaojin1; Fan, Bin1; Zeng, Zhige1
刊名APPLIED OPTICS
出版日期2015-04-01
卷号54期号:10页码:2658-2664
英文摘要The surface shape accuracy of the active stressed lap impacts the performance of grinding and polishing in the fabrication of large mirrors. We introduce a model of active stressed lap for the fabrication of a 4 m f/1.5 mirror based on finite element analysis (FEA), and the lap surface accuracy achieves RMS < 1.8 mu m in the FEA method. Using the lap surface measurement system, experimental verification is put forward, and the RMS of the measured lap surface is within 2 mu m in practice. A general improvement in lap surface accuracy using the Zernike polynomial is shown. After compensating the calculation errors, the lap surface accuracy is improved by 8%-23%, and achieves RMS < 1.5 mu m, which is appropriate for practical grinding and polishing. (C) 2015 Optical Society of America
WOS标题词Science & Technology ; Physical Sciences
类目[WOS]Optics
研究领域[WOS]Optics
关键词[WOS]TOOL
收录类别SCI
语种英语
WOS记录号WOS:000352152400016
公开日期2015-12-24
源URL[http://ir.ioe.ac.cn/handle/181551/2547]  
专题光电技术研究所_光电技术研究所被WoS收录文章
作者单位1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
推荐引用方式
GB/T 7714
Zhao, Hongshen,Li, Xiaojin,Fan, Bin,et al. Deformation verification and surface improvement of active stressed lap for 4 m-class primary mirror fabrication[J]. APPLIED OPTICS,2015,54(10):2658-2664.
APA Zhao, Hongshen,Li, Xiaojin,Fan, Bin,&Zeng, Zhige.(2015).Deformation verification and surface improvement of active stressed lap for 4 m-class primary mirror fabrication.APPLIED OPTICS,54(10),2658-2664.
MLA Zhao, Hongshen,et al."Deformation verification and surface improvement of active stressed lap for 4 m-class primary mirror fabrication".APPLIED OPTICS 54.10(2015):2658-2664.

入库方式: OAI收割

来源:光电技术研究所

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