Deformation verification and surface improvement of active stressed lap for 4 m-class primary mirror fabrication
文献类型:期刊论文
作者 | Zhao, Hongshen1,2; Li, Xiaojin1; Fan, Bin1; Zeng, Zhige1 |
刊名 | APPLIED OPTICS
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出版日期 | 2015-04-01 |
卷号 | 54期号:10页码:2658-2664 |
英文摘要 | The surface shape accuracy of the active stressed lap impacts the performance of grinding and polishing in the fabrication of large mirrors. We introduce a model of active stressed lap for the fabrication of a 4 m f/1.5 mirror based on finite element analysis (FEA), and the lap surface accuracy achieves RMS < 1.8 mu m in the FEA method. Using the lap surface measurement system, experimental verification is put forward, and the RMS of the measured lap surface is within 2 mu m in practice. A general improvement in lap surface accuracy using the Zernike polynomial is shown. After compensating the calculation errors, the lap surface accuracy is improved by 8%-23%, and achieves RMS < 1.5 mu m, which is appropriate for practical grinding and polishing. (C) 2015 Optical Society of America |
WOS标题词 | Science & Technology ; Physical Sciences |
类目[WOS] | Optics |
研究领域[WOS] | Optics |
关键词[WOS] | TOOL |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000352152400016 |
公开日期 | 2015-12-24 |
源URL | [http://ir.ioe.ac.cn/handle/181551/2547] ![]() |
专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
作者单位 | 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China |
推荐引用方式 GB/T 7714 | Zhao, Hongshen,Li, Xiaojin,Fan, Bin,et al. Deformation verification and surface improvement of active stressed lap for 4 m-class primary mirror fabrication[J]. APPLIED OPTICS,2015,54(10):2658-2664. |
APA | Zhao, Hongshen,Li, Xiaojin,Fan, Bin,&Zeng, Zhige.(2015).Deformation verification and surface improvement of active stressed lap for 4 m-class primary mirror fabrication.APPLIED OPTICS,54(10),2658-2664. |
MLA | Zhao, Hongshen,et al."Deformation verification and surface improvement of active stressed lap for 4 m-class primary mirror fabrication".APPLIED OPTICS 54.10(2015):2658-2664. |
入库方式: OAI收割
来源:光电技术研究所
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