Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers
文献类型：期刊论文
| 作者 | Liu Xian-Ming1,2; Li Bin-Cheng1; Huang Qiu-Ping1,2 |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2010-09-01 |
| 卷号 | 19期号:9 |
| 关键词 | photocarrier radiometry ion implantation thermal annealing silicon |
| 英文摘要 | An experimental study on the photocarrier radiometry signals of As(+) ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion implantation dose (1x10(11)-1x10(16)/cm(2)), implantation energy (20-140 keV) and subsequent isochronical annealing temperature (500-1100 degrees C are investigated. The results show that photocarrier radiometry signals are greatly enhanced for implanted samples annealed at high temperature, especially for those with a high implantation dose. The reduced surface recombination rate resulting from a high built-in electric field generated by annealing-activated impurities in the pn junction is believed to be responsible for the photocarrier radiometry signal enhancement. Photocarrier radiometry is contactless and can therefore be used as an effective in-line tool for the thermal annealing process monitoring of the ion-implanted wafers in semiconductor industries. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 关键词[WOS] | ROOM-TEMPERATURE ; PHOTOLUMINESCENCE ; LUMINESCENCE ; DEPENDENCE ; DIODES ; DEFECT |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000282186400085 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/3338]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu Xian-Ming,Li Bin-Cheng,Huang Qiu-Ping. Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers[J]. CHINESE PHYSICS B,2010,19(9). |
| APA | Liu Xian-Ming,Li Bin-Cheng,&Huang Qiu-Ping.(2010).Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers.CHINESE PHYSICS B,19(9). |
| MLA | Liu Xian-Ming,et al."Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers".CHINESE PHYSICS B 19.9(2010). |
入库方式： OAI收割
来源：光电技术研究所
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