A first principle study on p-type doped 3C-SiC
文献类型：期刊论文
| 作者 | Zhang Yun1; Shao Xiao-Hong1; Wang Zhi-Qiang2 |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2010-08-01 |
| 卷号 | 59期号:8页码:5652-5660 |
| 关键词 | SiC electronic structure doping VASP |
| 英文摘要 | The geometrical and electronic structures, the dopant formation energies, lattice constants, band structure and density of states of p-type SiC are calculated by the first principles of plane wave ultra-soft pseudo-potential method based on density functional theory. The band structures of different concentrations of B, Al and Ga are calculated. The results of the electronic structure show that the band gap narrows with the increase of doping concentration of B and the band gap widens with the increase of doping concentration of Al and Ga. At the same concentration the band gap of Ga doped SiC is wider than that of Al doped SiC, the band gap of Al doped SiC is wider than B doped SiC. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 关键词[WOS] | TOTAL-ENERGY CALCULATIONS ; WAVE BASIS-SET ; CRYSTALS ; METALS ; LIQUID ; 3C |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000281024100076 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/3344]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Beijing Univ Chem Technol, Coll Sci, Beijing 100029, Peoples R China 2.Chinese Acad Sci, Inst Opt & Elect, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang Yun,Shao Xiao-Hong,Wang Zhi-Qiang. A first principle study on p-type doped 3C-SiC[J]. ACTA PHYSICA SINICA,2010,59(8):5652-5660. |
| APA | Zhang Yun,Shao Xiao-Hong,&Wang Zhi-Qiang.(2010).A first principle study on p-type doped 3C-SiC.ACTA PHYSICA SINICA,59(8),5652-5660. |
| MLA | Zhang Yun,et al."A first principle study on p-type doped 3C-SiC".ACTA PHYSICA SINICA 59.8(2010):5652-5660. |
入库方式： OAI收割
来源：光电技术研究所
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