Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers
文献类型：期刊论文
| 作者 | Liu Xian-Ming1,2,3; Li Bin-Cheng1,2; Gao Wei-Dong1,2; Han Yan-Ling1,2 |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2010-03-01 |
| 卷号 | 59期号:3页码:1632-1637 |
| 关键词 | infrared spectroscopic ellipsometry ion implantation Drude model dispersion relation |
| 英文摘要 | The optical properties of the ion-implanted and annealed silicon wafer in visible spectral range are close to the single crystalline silicon due to the annealing-induced recrystallization, resulting in the unavailability of normal visible spectroscopic ellipsometry (SE) measurements. In this study, the SE measurements are performed in infrared range (2 20 mu m) to characterize the implanted and annealed wafers. An optical model based on the classical Drude free-carrier absorption equation is developed, with which the impurity concentration profile, resistivity, mobility of the carriers, and the dispersion relations of the implanted layer are determined. The relationships between these parameters and the implantation dose are also analyzed. The results suggest that the infrared SE is an effective method to characterize the annealed silicon wafers. Longer wavelength should be used to distinguish lower impurity concentration. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 关键词[WOS] | SI(100) WAFERS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000276004500032 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/3377]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Chinese Acad Sci, Key Lab Beam Control, Chengdu 610209, Peoples R China 2.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China 3.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu Xian-Ming,Li Bin-Cheng,Gao Wei-Dong,et al. Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers[J]. ACTA PHYSICA SINICA,2010,59(3):1632-1637. |
| APA | Liu Xian-Ming,Li Bin-Cheng,Gao Wei-Dong,&Han Yan-Ling.(2010).Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers.ACTA PHYSICA SINICA,59(3),1632-1637. |
| MLA | Liu Xian-Ming,et al."Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers".ACTA PHYSICA SINICA 59.3(2010):1632-1637. |
入库方式： OAI收割
来源：光电技术研究所
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