Experimental analysis of solid immersion interference lithography based on backside exposure technique
文献类型：期刊论文
| 作者 | Li, Xupeng1; Shi, Sha1; Zhang, Zhiyou1; Wang, Jingquan1; Li, Shuhong1; Gao, Fuhua1; Shi, Ruiying1; Du, Jinglei1; Du, Chunlei2; Zhang, Yixiao1 |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2011-08-01 |
| 卷号 | 88期号:8页码:2509-2512 |
| 关键词 | Solid immersion Interference lithography Backside exposure technique |
| 英文摘要 | We report a method of fabricating metal nano-grating by Solid immersion Interference lithography based on Backside exposure technique (SIB). Solid immersion lithography can improve the resolution of interference patterns by a factor of n (refractive index of prism), and backside exposure technique can improve the energy utilization ratio and protect the surface of the resist from being contaminated. In the process of fabrication, a high quality sacrificial layer (dielectric grating with high modulation depth and appropriate duty ratio) is important for transferring the patterns to the metal film. We optimized the exposure/development time by simulating the process of backside exposure. Simulation and experiment results show that: using 441.6 nm wavelength laser, a series of subwavelength patterns (used as sacrificial layer) with high modulation depth and appropriate duty ratio can be gotten, the feature size of the patterns can be down to 80 nm which is less than 0.18 lambda. Using optimized condition, high quality sacrificial layer can be achieved by using the backside exposure technique. Backside exposure technique has a greater exposure/development time tolerance for fabricating nano-patterns than the conventional interference lithography, which can be used for nano-metal grating fabrication. (C) 2011 Elsevier B.V. All rights reserved. |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| 类目[WOS] | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied |
| 研究领域[WOS] | Engineering ; Science & Technology - Other Topics ; Optics ; Physics |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000293663400218 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/3443]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Sichuan Univ, Sch Phys, Chengdu 610064, Peoples R China 2.CAS, Inst Opt & Elect, Chengdu 610209, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Xupeng,Shi, Sha,Zhang, Zhiyou,et al. Experimental analysis of solid immersion interference lithography based on backside exposure technique[J]. MICROELECTRONIC ENGINEERING,2011,88(8):2509-2512. |
| APA | Li, Xupeng.,Shi, Sha.,Zhang, Zhiyou.,Wang, Jingquan.,Li, Shuhong.,...&Zhang, Yixiao.(2011).Experimental analysis of solid immersion interference lithography based on backside exposure technique.MICROELECTRONIC ENGINEERING,88(8),2509-2512. |
| MLA | Li, Xupeng,et al."Experimental analysis of solid immersion interference lithography based on backside exposure technique".MICROELECTRONIC ENGINEERING 88.8(2011):2509-2512. |
入库方式： OAI收割
来源：光电技术研究所
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