中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
INFLUENCE FACTORS ON SHG IN PCs CONSISTING OF CENTRO-SYMMETRIC MATERIALS

文献类型:期刊论文

作者Shi, Jianping1; Chen, Xunan2
刊名INTERNATIONAL JOURNAL OF MODERN PHYSICS B
出版日期2011-08-10
卷号25期号:20页码:2657-2663
关键词Second harmonic generation photonic crystals electric quadrupole polarization
英文摘要Based on the finite difference-time algorithm, the factors influencing second harmonic generation in photonic crystals consisting of centro-symmetric materials are analyzed. The results show that photonic band gap is the key factor inducing the generation of second harmonic (SH). The suitable angle of incidence of pumping wave, waveguide length and fill factor will be helpful for the enhancement of SH. For the structure in this paper, when the angle of incidence 20 degrees-30 degrees, SH intensity will be five times to that when the angle is nearly 90 degrees. According to the results of our computations, the critical wave-guide length is 50 mu m for the maximal intensity of SHG.
WOS标题词Science & Technology ; Physical Sciences
类目[WOS]Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical
研究领域[WOS]Physics
关键词[WOS]2ND-HARMONIC GENERATION ; PHOTONIC CRYSTAL
收录类别SCI
语种英语
WOS记录号WOS:000293416800001
公开日期2015-12-24
源URL[http://ir.ioe.ac.cn/handle/181551/3449]  
专题光电技术研究所_光电技术研究所被WoS收录文章
作者单位1.Anhui Normal Univ, Dept Phys & Elect Informat, Wuhu 241000, Peoples R China
2.Chinese Acad Sci, State Key Lab Opt Technol Microfabricat, Inst Opt & Elect, Chengdu 610209, Peoples R China
推荐引用方式
GB/T 7714
Shi, Jianping,Chen, Xunan. INFLUENCE FACTORS ON SHG IN PCs CONSISTING OF CENTRO-SYMMETRIC MATERIALS[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2011,25(20):2657-2663.
APA Shi, Jianping,&Chen, Xunan.(2011).INFLUENCE FACTORS ON SHG IN PCs CONSISTING OF CENTRO-SYMMETRIC MATERIALS.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,25(20),2657-2663.
MLA Shi, Jianping,et al."INFLUENCE FACTORS ON SHG IN PCs CONSISTING OF CENTRO-SYMMETRIC MATERIALS".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 25.20(2011):2657-2663.

入库方式: OAI收割

来源:光电技术研究所

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