Suppression of pinhole defects in fullerene molecular electron beam resists
文献类型：期刊论文
| 作者 | Chen, X.; Robinson, A. P. G.; Manickam, M.; Preece, J. A. |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2007-05-01 |
| 卷号 | 84期号:5-8页码:1066-1070 |
| 关键词 | molecular resist fullerene electron beam lithography pinholes |
| 英文摘要 | Molecular resists, such as fullerenes, are of significant interest for next generation lithographies. They utilize small carbon rich molecules, giving the potential for higher resolution and etch durability, together with lower line width roughness than conventional polymeric resists. The main problem with such materials has historically been low sensitivity, but with the successful implementation of chemical amplification schemes for several of the molecular resist families this is becoming less of a concern. Aside from sensitivity the other main obstacle has been the difficulty of preparing good quality thin films of non-polymeric materials. Here we present a study of pinhole defect density in fullerene films as a function of substrate cleanliness, post-application bake, and incorporation of chemical amplification components. Ultrathin (sub 30 nm) films of the previously studied fullerene resist M1703-01, and the polymeric resist PMMA were prepared on hydrogen terminated silicon by spin coating and the density of pinhole defects in the films was studied using atomic force microscopy. It was seen that pinhole density was strongly affected by the quality of the substrates, with the lowest densities found on films spun on freshly cleaned substrates. Aging of the film subsequent to spin coating was seen to have less effect than similar aging of the substrate prior to spin coating. Additionally, the use of a post-application bake significantly degraded the quality of the films. The addition of an epoxy crosslinker for chemical amplification was found to reduce defect density to very low levels. (c) 2007 Elsevier B.V. All rights reserved. |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| 类目[WOS] | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied |
| 研究领域[WOS] | Engineering ; Science & Technology - Other Topics ; Optics ; Physics |
| 关键词[WOS] | NEXT-GENERATION LITHOGRAPHY ; NANOMETER LITHOGRAPHY ; HIGH-RESOLUTION ; DERIVATIVES ; NANOLITHOGRAPHY ; TRIPHENYLENE ; CALIXARENE ; SYSTEMS |
| 收录类别 | ISTP ; SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000247182500088 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/3582]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Univ Birmingham, Sch Phys & Astron, Nanoscale Phys Res Lab, Birmingham B15 2TT, W Midlands, England 2.Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Microfabricat, Chengdu 610209, Peoples R China 3.Univ Birmingham, Sch Chem, Birmingham B15 2TT, W Midlands, England |
| 推荐引用方式 GB/T 7714 | Chen, X.,Robinson, A. P. G.,Manickam, M.,et al. Suppression of pinhole defects in fullerene molecular electron beam resists[J]. MICROELECTRONIC ENGINEERING,2007,84(5-8):1066-1070. |
| APA | Chen, X.,Robinson, A. P. G.,Manickam, M.,&Preece, J. A..(2007).Suppression of pinhole defects in fullerene molecular electron beam resists.MICROELECTRONIC ENGINEERING,84(5-8),1066-1070. |
| MLA | Chen, X.,et al."Suppression of pinhole defects in fullerene molecular electron beam resists".MICROELECTRONIC ENGINEERING 84.5-8(2007):1066-1070. |
入库方式： OAI收割
来源：光电技术研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。