中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
193 nm interference nanolithography based on SPP

文献类型:期刊论文

作者Xiong, Wei1; Du, Jinglei1; Fang, Liang1; Luo, Xiangang2; Deng, Qiling2; Du, Chunlei2
刊名MICROELECTRONIC ENGINEERING
出版日期2008-05-01
卷号85期号:5-6页码:754-757
关键词193 nm-interference nanolithography SPP sub-wavelength pattern FDTD
英文摘要Large-area surface plasmon polariton interference lithography (LSPPIL) is a promising nano-fabrication technique for making periodic nano-patterns. In this paper, for reducing further the feature size of a lithography pattern, we propose to use 193 nm illumination wavelength in LSPPIL and replace the silver coating by tungsten. Theoretical analysis and preliminary numerical simulations indicate that 193 nm-LSPPIL can produce periodic patterns with a critical dimension as small as 30 nm with high contrast and enough long exposure depth. 193 nm interference nanolithography based on SPP has the potential to realize the 32 nm node periodic nano-structure manufacture. (C) 2008 Elsevier B.V. All rights reserved.
WOS标题词Science & Technology ; Technology ; Physical Sciences
类目[WOS]Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied
研究领域[WOS]Engineering ; Science & Technology - Other Topics ; Optics ; Physics
关键词[WOS]PLASMON-ASSISTED NANOLITHOGRAPHY
收录类别SCI ; ISTP
语种英语
WOS记录号WOS:000257413400006
公开日期2015-12-24
源URL[http://ir.ioe.ac.cn/handle/181551/3599]  
专题光电技术研究所_光电技术研究所被WoS收录文章
作者单位1.Sichuan Univ, Dept Phys, Chengdu 610064, Peoples R China
2.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China
推荐引用方式
GB/T 7714
Xiong, Wei,Du, Jinglei,Fang, Liang,et al. 193 nm interference nanolithography based on SPP[J]. MICROELECTRONIC ENGINEERING,2008,85(5-6):754-757.
APA Xiong, Wei,Du, Jinglei,Fang, Liang,Luo, Xiangang,Deng, Qiling,&Du, Chunlei.(2008).193 nm interference nanolithography based on SPP.MICROELECTRONIC ENGINEERING,85(5-6),754-757.
MLA Xiong, Wei,et al."193 nm interference nanolithography based on SPP".MICROELECTRONIC ENGINEERING 85.5-6(2008):754-757.

入库方式: OAI收割

来源:光电技术研究所

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