193 nm interference nanolithography based on SPP
文献类型:期刊论文
作者 | Xiong, Wei1; Du, Jinglei1; Fang, Liang1; Luo, Xiangang2; Deng, Qiling2; Du, Chunlei2 |
刊名 | MICROELECTRONIC ENGINEERING
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出版日期 | 2008-05-01 |
卷号 | 85期号:5-6页码:754-757 |
关键词 | 193 nm-interference nanolithography SPP sub-wavelength pattern FDTD |
英文摘要 | Large-area surface plasmon polariton interference lithography (LSPPIL) is a promising nano-fabrication technique for making periodic nano-patterns. In this paper, for reducing further the feature size of a lithography pattern, we propose to use 193 nm illumination wavelength in LSPPIL and replace the silver coating by tungsten. Theoretical analysis and preliminary numerical simulations indicate that 193 nm-LSPPIL can produce periodic patterns with a critical dimension as small as 30 nm with high contrast and enough long exposure depth. 193 nm interference nanolithography based on SPP has the potential to realize the 32 nm node periodic nano-structure manufacture. (C) 2008 Elsevier B.V. All rights reserved. |
WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
类目[WOS] | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied |
研究领域[WOS] | Engineering ; Science & Technology - Other Topics ; Optics ; Physics |
关键词[WOS] | PLASMON-ASSISTED NANOLITHOGRAPHY |
收录类别 | SCI ; ISTP |
语种 | 英语 |
WOS记录号 | WOS:000257413400006 |
公开日期 | 2015-12-24 |
源URL | [http://ir.ioe.ac.cn/handle/181551/3599] ![]() |
专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
作者单位 | 1.Sichuan Univ, Dept Phys, Chengdu 610064, Peoples R China 2.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China |
推荐引用方式 GB/T 7714 | Xiong, Wei,Du, Jinglei,Fang, Liang,et al. 193 nm interference nanolithography based on SPP[J]. MICROELECTRONIC ENGINEERING,2008,85(5-6):754-757. |
APA | Xiong, Wei,Du, Jinglei,Fang, Liang,Luo, Xiangang,Deng, Qiling,&Du, Chunlei.(2008).193 nm interference nanolithography based on SPP.MICROELECTRONIC ENGINEERING,85(5-6),754-757. |
MLA | Xiong, Wei,et al."193 nm interference nanolithography based on SPP".MICROELECTRONIC ENGINEERING 85.5-6(2008):754-757. |
入库方式: OAI收割
来源:光电技术研究所
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