Improved directional emission by resonant defect cavity modes in photonic crystal waveguide with corrugated surface
文献类型：期刊论文
| 作者 | Gan, D.1; Qi, Y.1; Yang, X.1; Ma, J.2; Cui, J.1; Wang, C.1; Luo, X.1 |
| 刊名 | APPLIED PHYSICS B-LASERS AND OPTICS
 |
| 出版日期 | 2008-12-01 |
| 卷号 | 93期号:4页码:849-852 |
| 关键词 | 42 70 QS 42 79 Ci |
| 英文摘要 | Directional emission of light from a photonic crystal (PC) waveguide can be observed by adding periodically corrugated surface as reported in Moreno et al. (Phys. Rev. B 69:121402, 2004). In this paper, it is being further shown by numerical simulation with finite-difference time-domain method that adding point defects to the adjacent layer of surface corrugations helps to improve directional emission. The coupling between the resonant cavity modes and surface modes is believed to account for this effect. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Optics ; Physics, Applied |
| 研究领域[WOS] | Optics ; Physics |
| 关键词[WOS] | ENHANCED TRANSMISSION ; LIGHT |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000261026300019 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/3647]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Microfabricat, Chengdu 610209, Peoples R China 2.Shenzhen Univ, Coll Informat Engn, Shenzhen 518060, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gan, D.,Qi, Y.,Yang, X.,et al. Improved directional emission by resonant defect cavity modes in photonic crystal waveguide with corrugated surface[J]. APPLIED PHYSICS B-LASERS AND OPTICS,2008,93(4):849-852. |
| APA | Gan, D..,Qi, Y..,Yang, X..,Ma, J..,Cui, J..,...&Luo, X..(2008).Improved directional emission by resonant defect cavity modes in photonic crystal waveguide with corrugated surface.APPLIED PHYSICS B-LASERS AND OPTICS,93(4),849-852. |
| MLA | Gan, D.,et al."Improved directional emission by resonant defect cavity modes in photonic crystal waveguide with corrugated surface".APPLIED PHYSICS B-LASERS AND OPTICS 93.4(2008):849-852. |
入库方式： OAI收割
来源：光电技术研究所
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