Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation
文献类型：期刊论文
| 作者 | Wang, Qian1,2; Li, Bincheng1; Ren, Shengdong1,2; Wang, Qiang1 |
| 刊名 | INTERNATIONAL JOURNAL OF THERMOPHYSICS
 |
| 出版日期 | 2015-06-01 |
| 卷号 | 36期号:5-6页码:1173-1180 |
| 关键词 | Ion implantation Laser irradiation Photocarrier radiometry Silicon Ultra-shallow junction |
| 英文摘要 | The activation and recrystallization in arsenic ion-implanted silicon under excimer laser (193 nm) irradiation is investigated using photocarrier radiometry (PCR). Arsenic ion-implanted silicon wafers with a dose of and an energy of 1 keV were irradiated at different laser parameters, such as the laser fluence, shot number, and repetition rate. The excimer laser irradiation-induced enhancement of PCR signals of implanted silicon samples showed that the implantation-induced crystalline structural damage was reduced and the implanted ions were effectively activated. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied |
| 研究领域[WOS] | Thermodynamics ; Chemistry ; Mechanics ; Physics |
| 关键词[WOS] | BORON |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000356611100050 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/3663]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Qian,Li, Bincheng,Ren, Shengdong,et al. Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2015,36(5-6):1173-1180. |
| APA | Wang, Qian,Li, Bincheng,Ren, Shengdong,&Wang, Qiang.(2015).Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation.INTERNATIONAL JOURNAL OF THERMOPHYSICS,36(5-6),1173-1180. |
| MLA | Wang, Qian,et al."Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation".INTERNATIONAL JOURNAL OF THERMOPHYSICS 36.5-6(2015):1173-1180. |
入库方式： OAI收割
来源：光电技术研究所
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