Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers
文献类型：期刊论文
| 作者 | Ren, Shengdong1,2,3; Li, Bincheng1,2; Wang, Qian1,2,3 |
| 刊名 | INTERNATIONAL JOURNAL OF THERMOPHYSICS
 |
| 出版日期 | 2015-06-01 |
| 卷号 | 36期号:5-6页码:1045-1050 |
| 关键词 | Carrier effective lifetime Photocarrier radiometry Silicon Thermal annealing |
| 英文摘要 | The annealing temperature dependences of the photocarrier radiometry (PCR) amplitude, the frequency dependences of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze the thermally annealed (C to C) silicon samples with arsenic ion (As implantation of cm dose. The dependence of the carrier effective lifetime on the annealing temperature has been extracted from the normalized quasi-time-domain PCR waveform profiles, and showed to be related to the transient PCR signals. Furthermore, the phenomenon of the reduction of the carrier effective lifetime caused by incomplete annealing (above C and 30 s) of As implanted silicon samples were observed and analyzed. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied |
| 研究领域[WOS] | Thermodynamics ; Chemistry ; Mechanics ; Physics |
| 关键词[WOS] | SI |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000356611100032 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/3665]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Chinese Acad Sci, Inst Optic & Elect, Chengdu 610209, Sichuan, Peoples R China 2.Chinese Acad Sci, Key Lab Opt Engn, Chengdu 610209, Sichuan, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ren, Shengdong,Li, Bincheng,Wang, Qian. Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2015,36(5-6):1045-1050. |
| APA | Ren, Shengdong,Li, Bincheng,&Wang, Qian.(2015).Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers.INTERNATIONAL JOURNAL OF THERMOPHYSICS,36(5-6),1045-1050. |
| MLA | Ren, Shengdong,et al."Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers".INTERNATIONAL JOURNAL OF THERMOPHYSICS 36.5-6(2015):1045-1050. |
入库方式： OAI收割
来源：光电技术研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。