中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [5]
采集方式
OAI收割 [5]
内容类型
会议论文 [5]
发表日期
2001 [5]
学科主题
半导体材料 [5]
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浏览/检索结果:
共5条,第1-5条
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发表日期:2001
学科主题:半导体材料
内容类型:会议论文
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Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
会议论文
OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:
Xu B
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
low dimensional structures
molecular beam epitaxy
nanomaterials
INAS ISLANDS
GAAS
GROWTH
GAAS(100)
THICKNESS
DENSITY
High-quality metamorphic HEMT grown on GaAs substrates by MBE
会议论文
OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zeng YP
;
Cao X
;
Cui LJ
;
Kong MY
;
Pan L
;
Wang BQ
;
Zhu ZP
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/11/15
molecular beam epitaxy
high electron mobility transistors
DENSITY
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates
会议论文
OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Qu B
;
Zheng XH
;
Wang YT
;
Xu DP
;
Lin SM
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2010/11/15
X-ray diffraction
nitrides
semiconducting III-V materials
PHASE
FILMS
Self-assembled quantum dots, wires and quantum-dot lasers
会议论文
OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:
Xu B
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
low dimensional structures
strain
molecular beam epitaxy
quantum dots
semiconducting III-V materials
laser diodes
WELL LASERS
Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy
会议论文
OAI收割
4th international conference on nitride semiconductors (icns-4), denver, colorado, jul 16-20, 2001
Xu SJ
;
Or CT
;
Li Q
;
Zheng LX
;
Xie MH
;
Tong SY
;
Yang H
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
OPTICAL-TRANSITIONS
PHOTOLUMINESCENCE