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CAS IR Grid
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长春光学精密机械与物... [1]
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会议论文 [1]
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2006 [1]
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专题:长春光学精密机械与物理研究所
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Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE)
会议论文
OAI收割
Zhang Y. J.
;
Xu C. S.
;
Liu Y. C.
;
Liu Y. X.
;
Wang G. R.
;
Fan X. W.
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提交时间:2013/03/25
We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h
a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range
from 80 to 300 K
but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.