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CAS IR Grid
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长春光学精密机械与物... [1]
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OAI收割 [1]
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会议论文 [1]
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2007 [1]
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发表日期:2007
内容类型:会议论文
专题:长春光学精密机械与物理研究所
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The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE)
会议论文
OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
作者:
Wang C.
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提交时间:2013/03/25
Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.