中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
近代物理研究所 [6]
长春光学精密机械与物... [5]
国家空间科学中心 [1]
遥感与数字地球研究所 [1]
采集方式
OAI收割 [13]
内容类型
会议论文 [13]
发表日期
2008 [13]
学科主题
空间环境 [1]
筛选
浏览/检索结果:
共13条,第1-10条
帮助
限定条件
发表日期:2008
内容类型:会议论文
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
发表日期升序
发表日期降序
An electron cyclotron resonance ion source based low energy ion beam platform
会议论文
OAI收割
作者:
Sun, L. T.
;
Shang, Y.
;
Ma, B. H.
;
Zhang, X. Z.
;
Feng, Y. C.
  |  
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2018/08/20
An electron cyclotron resonance ion source based low energy ion beam platform
会议论文
OAI收割
作者:
Sun, L. T.
;
Shang, Y.
;
Ma, B. H.
;
Zhang, X. Z.
;
Feng, Y. C.
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2018/08/20
Extreme ultraviolet narrow band emission from electron cyclotron resonance plasmas
会议论文
OAI收割
作者:
Zhao, H. Y.
;
Zhao, H. W.
;
Sun, L. T.
;
Zhang, X. Z.
;
Wang, H.
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2018/08/20
Extreme ultraviolet narrow band emission from electron cyclotron resonance plasmas
会议论文
OAI收割
作者:
Zhao, H. Y.
;
Zhao, H. W.
;
Sun, L. T.
;
Zhang, X. Z.
;
Wang, H.
  |  
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2018/08/20
Experimental study of hot electrons in LECR2M plasma
会议论文
OAI收割
作者:
Zhao, H. Y.
;
Zhao, H. W.
;
Ma, X. W.
;
Wang, H.
;
Zhang, X. Z.
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2018/08/20
Proposal and investigation for a planar MOEMS 18 wavelength-selective switch (EI CONFERENCE)
会议论文
OAI收割
MEMS/MOEMS Technologies and Applications III, November 12, 2007 - November 14, 2007, Beijing, China
作者:
Li W.
;
Li W.
收藏
  |  
浏览/下载:92/0
  |  
提交时间:2013/03/25
This paper presents a new wavelength-selective switch by combining silicon micromaching and microassembly techniques. The 18 wavelength-selective switch (WSS) based on micro electro mechanical systems (MEMS) technology is proposed and fabricated with micro electromagnetic actuators
8 WXC prototype node is implemented by using 18 WSSs as building elements. The working principle and the configuration of the micro electromagnetic actuator are illuminated. By analysis
reflecting prisms and narrow-band thin films filters. And a 8
the property suits for the application when the inputs are 2V
and the best fiber-to-fiber insertion loss 5dB is gotten.
A novel bottom-emitting vcsel's one-dimension array (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:
Wang L.
;
Wang L.
;
Wang L.
;
Liu Y.
;
Liu Y.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/03/25
A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200m
150m and 100m-diameter
with the center spacings of 300m and 250m respectively. The maximum power is 880mW at a current of 4A
corresponding to lKW/cm2 average optical power density. The differential resistance is 0.09 with a threshold of 0.56A. The novel array is compared with a 300m-aperture-size single device and a 44 2-D array with 50m element aperture size and 250m centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power
threshold current
lasing spectra
far-field distribution etc. 2008 SPIE.
High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:
Wang X.
;
Wang L.
;
Wang L.
;
Wang L.
;
Wang Y.
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2013/03/25
High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle
the average driving power in the laser chip is quite low
so the heating effect cemiconductor laser is very small
using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.
Proposal and investigation for a planar MOEMS 1x8 wavelength-selective switch - art. no. 683608
会议论文
OAI收割
2008
作者:
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2013/03/28