机构

• 半导体研究所 [3]

采集方式

• OAI收割 [3]

内容类型

• 会议论文 [3]

发表日期

• 2004 [3]

学科主题

• 微电子学 [3]

筛选

浏览/检索结果: 共3条，第1-3条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文  OAI收割 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Li, N; Zhang, GQ; Liu, ZL; Fan, K; Zheng, ZS; Lin, Q; Zhang, ZX; Lin, CL 收藏  |  浏览/下载：127/22  |  提交时间：2010/03/29 SIMOX  fluorine  ionizing radiation   Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET 会议论文  OAI收割 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Fan, K 收藏  |  浏览/下载：167/30  |  提交时间：2010/03/29 Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides 会议论文  OAI收割 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Zhang, GQ; Liu, ZL; Li, N; Zhen, ZS; Liu, GH; Lin, Q; Zhang, ZX; Lin, CL 收藏  |  浏览/下载：141/31  |  提交时间：2010/03/29 fluorine  SIMOX  charge trapping  radiation  SIO2