中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 2013 [3]
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Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:  
Zhang T.
收藏  |  浏览/下载:20/0  |  提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Non-porous activated mesophase carbon microbeads as a negative electrode material for asymmetric electrochemical capacitors 期刊论文  OAI收割
journal of power sources, 2013, 卷号: 231, 页码: 29-33
Zheng C; Gao JC; Yoshio M; Qi L; Wang HY
收藏  |  浏览/下载:16/0  |  提交时间:2014/04/15
Fabricating graphene oxide/poly(3-butylthiophene) hybrid materials with different morphologies and crystal structures 期刊论文  OAI收割
rsc advances, 2013, 卷号: 3, 期号: 13, 页码: 4254-4260
Zhou X; Chen ZB; Qu YP; Su Q; Yang XN
收藏  |  浏览/下载:9/0  |  提交时间:2014/04/18