中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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物理研究所 [32]
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1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:
Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qiwen) [1] , [2]
;
Lu, W (Lu, Wu) [1] , [2]
;
Cui, JW (Cui, Jiangwei) [1] , [2]
;
Li, YD (Li, Yudong) [1] , [2]
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2022/04/07
Total ionizing dose irradiation
UTBB FD-SOI
1
f noise
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
;
He, CF (He, Chengfa) 1
;
Guo, Q (Guo, Qi) 1
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/12/06
Threshold voltage
TestingMOSFET circuits
Transistors
Standards
Logic gates
Fluctuations
Buried oxide (BOX)
silicon-on-insulator (SOI)
total ionizing dose (TID)
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:
Xi, SX (Xi, Shan-Xue)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qi-Wen)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1,2 ]
;
Cui, JW (Cui, Jiang-Wei)[ 1,2 ]
;
Wei, Y (Wei, Ying)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2020/07/06
Total ionizing dose
h-shape gate
channel width
partially depleted
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
  |  
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
Structural and electronic properties of atomically thin Bismuth on Au(111)
期刊论文
OAI收割
SURFACE SCIENCE, 2019, 卷号: 679, 期号: -, 页码: 147—153
作者:
He, BC
;
Tian, G
;
Gou, J
;
Liu, BX
;
Shen, KC
  |  
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2019/12/30
ULTRAVIOLET PHOTOEMISSION
EPITAXIAL GRAPHENE
MOLECULES
MONOLAYERS
SYSTEMS
GROWTH
Electronic structure evolution at DBBA/Au(111) interface W/O Bismuth insertion layer
期刊论文
OAI收割
SYNTHETIC METALS, 2019, 卷号: 251, 期号: -, 页码: 24—29
作者:
Tian, QW
;
He, BC
;
Zhao, Y
;
Wang, ST
;
Xiao, JT
  |  
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2019/12/30
INITIO MOLECULAR-DYNAMICS
BOTTOM-UP FABRICATION
GRAPHENE NANORIBBONS
Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs
期刊论文
OAI收割
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
作者:
Zheng, QW (Zheng, Qi-Wen)
;
Cui, JW (Cui, Jiang-Wei)
;
Wei, Y (Wei, Ying)
;
Yu, XF (Yu, Xue-Feng)
;
Lu, W (Lu, Wu)
  |  
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2018/05/07
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
作者:
Zheng, QW (Zheng, Qiwen)
;
Cui, JW (Cui, Jiangwei)
;
Yu, XF (Yu, Xuefeng)
;
Lu, W (Lu, Wu)
;
He, CF (He, Chengfa)
  |  
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2018/05/15
Static Noise Margin (Snm)
Static Random Access Memory (Sram)
Total Ionizing Dose (Tid)
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Lu, W (Lu, Wu)[ 1 ]
;
Guo, HX (Guo, Hongxia)[ 1 ]
;
Liu, J (Liu, Jie)[ 2 ]
  |  
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2018/09/27
Charge Sharing
Single-event Upset (Seu)
Static Random Access Memory
Total Ionizing Dose (Tid)