中国科学院机构知识库网格系统: 检索

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	Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers 期刊论文 OAI收割 JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 118, 期号: 5 Yuan, ZH; Huang, L; Feng, JF; Wen, ZC; Li, DL; Han, XF; Nakano, T; Yu, T; Naganuma, H 收藏 \| 浏览/下载：11/0 \| 提交时间：2016/12/26
	Preparation of a heteroepitaxial LaxSryMnzO3/BiFeO3 bilayer by r.f. magnetron sputtering with various oxygen gas flow ratios 期刊论文 OAI收割 AIP ADVANCES, 2014, 卷号: 4, 期号: 8 Naganuma, H; Ichinose, T; Begum, HA; Sato, S; Han, XF; Miyazaki, T; Bae, IT; Oogane, M; Ando, Y 收藏 \| 浏览/下载：25/0 \| 提交时间：2015/04/14
	Magnetic Properties and Magnetic Domain Structures Evolution Modulated by CoFeB Layer in [Pd/Co]/CoFeB/MgO/CoFeB/[Co/Pd] Perpendicular MTJ Films 期刊论文 OAI收割 IEEE TRANSACTIONS ON MAGNETICS, 2012, 卷号: 48, 期号: 11, 页码: 2812 Yu, T; Naganuma, H; Shi, DW; Ando, Y; Han, XF 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/09/18
	Chemical diffusion: Another factor affecting the magnetoresistance ratio in Ta/CoFeB/MgO/CoFeB/Ta magnetic tunnel junction 期刊论文 OAI收割 APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 1 Yang, Y; Wang, WX; Yao, Y; Liu, HF; Naganuma, H; Sakul, TS; Han, XF; Yu, RC 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/09/17 FILMS
	Annealing temperature dependence of exchange bias in BiFeO3/CoFe bilayers 期刊论文 OAI收割 JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 111, 期号: 7 Yu, T; Naganuma, H; Wang, WX; Ando, Y; Han, XF 收藏 \| 浏览/下载：10/0 \| 提交时间：2013/09/17 FILMS MODEL
	Enhancement of magnetoresistance using CoFe/Ru/CoFe synthetic ferrimagnetic pinned layer in BiFeO3 based spin-valves 期刊论文 OAI收割 APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 7 Naganuma, H; Bae, IT; Miyazaki, T; Kubota, M; Inami, N; Kawada, Y; Oogane, M; Mizukami, S; Han, XF; Ando, Y 收藏 \| 浏览/下载：20/0 \| 提交时间：2013/09/17 ROOM-TEMPERATURE
	The perpendicular anisotropy of Co40Fe40B20 sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction 期刊论文 OAI收割 APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 1 Wang, WX; Yang, Y; Naganuma, H; Ando, Y; Yu, RC; Han, XF 收藏 \| 浏览/下载：20/0 \| 提交时间：2013/09/23 ROOM-TEMPERATURE MAGNETORESISTANCE