机构

• 高能物理研究所 [2]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [3]

内容类型

• 学位论文 [2]
• 会议论文 [1]

发表日期

• 2017 [1]
• 2015 [1]
• 2007 [1]

学科主题

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 博士后出站报告-BESIII实验上ψ(3686)→γXc1,Xc1→η'π+π-过程的分波分析 学位论文  OAI收割 北京: 中国科学院, 2017 作者:  闵天觉   |  收藏  |  浏览/下载：29/0  |  提交时间：2019/03/18 π1(1600)  混杂态  分波分析   博士论文-BES-III实验上J/psi和psi'衰变中新型强子的寻找和研究 学位论文  OAI收割 博士, 北京: 中国科学院大学, 2015 作者:  闵天觉 收藏  |  浏览/下载：130/0  |  提交时间：2015/10/14 J/ψ  衰变  ψ′  衰变  强子谱  X(1835)  π1(1600)  分波振幅分析   Fabrication technique of large-scale lightweight SiC space mirror (EI CONFERENCE) 会议论文  OAI收割 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2007: Large Mirrors and Telescopes, July 8, 2007 - July 12, 2007, Chengdu, China 作者:  Zhang G.;  Zhang G.;  Zhang G. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 Silicon carbide (SiC) is a new type candidate material for large-scale lightweight space mirror. Its low thermal distortion  high stiffness  high optical quality  and its dimensional stability are better than other traditional optical substrate materials such as ULE  Zerodure  Beryllium (Be) and so on. In this paper  the lightweight silicon carbide space mirror blank was fabricated by reaction sintering. As a space born mirror material  silicon carbide must be an optical grade ceramic. So we prepared the silicon carbide green body with gel-casting method. Then some carbon materials were supplemented into the green body which will bring reaction-sintering with silicon in a vacuum furnace during 1500-1600C  ultimately the reaction bonded silicon carbide was made. The diameter of SiC space mirror blank we have made is 680mm. If expanding the size of the vacuum furnace  bigger mirror blank can be obtained. The test results show that the mechanical and thermal properties of RB-SiC are excellent with bending strength of 350MPa  fracture toughness of 4.1 MPa·m1/2 and coefficient of thermal expansion(CET) of 2.6710-6/K. The surface roughness(RMS) could be better than 3nm.