中国科学院机构知识库网格
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Decoding the inconsistency of six cropland maps in China 期刊论文  OAI收割
CROP JOURNAL, 2024, 卷号: 12, 期号: 1, 页码: 281-294
作者:  
Cui, Yifeng;  Liu, Ronggao;  Li, Zhichao;  Zhang, Chao;  Song, Xiao-Peng
  |  收藏  |  浏览/下载:16/0  |  提交时间:2024/04/30
Synthesis, characterization, and luminescent properties of a red-emitting Europium complex (EI CONFERENCE) 会议论文  OAI收割
1st International Conference on Energy and Environmental Protection, ICEEP 2012, June 23, 2012 - June 24, 2012, Hohhot, China
作者:  
Li B.;  Zhang L.;  Zhang L.;  Li B.;  Li B.
收藏  |  浏览/下载:78/0  |  提交时间:2013/03/25
a fluorine functionalized 1  10-phenanthroline ligand  3-ethyl-2-(2- fluorophenyl) imidazo[4  5-f]1  10-phenanthroline(EFPIP) and the corresponding red-emitting Eu(III) complex Eu(DBM)3(EFPIP) (DBM = dibenzoylmethanate) was synthesized and the photophysical properties and electroluminescent(EL) performances were researched. When Eu(DBM) 3(EFPIP) was used as emitting material in organic devices  the maximum efficiency and luminance of red emission achieved from the EL device with the configuration of ITO/m-MTDATA (30 nm)/NPB (20 nm)/x wt% Eu(DBM) 3(EFPIP) doped in CBP (30 nm)/Bphen (20 nm)/Alq3 (20 nm)/LiF (0.8 nm)/Al were 3.6 cd/A and 563 cd/m2  respectively. Compared with the previously reported devices based on methyl or chlorine substitute Eu(III) complexes  the EL performances of the device using Eu(DBM)3(EFPIP) as an emitter was significantly enhanced due to the introduction of fluorine. (2012) Trans Tech Publications  Switzerland.  
Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique (EI CONFERENCE) 会议论文  OAI收割
ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Wang X.;  Wang X.;  Wang X.;  Zheng X.;  Gao J.
收藏  |  浏览/下载:17/0  |  提交时间:2013/03/25
With reactive low voltage ion plating technique  ITO (indium oxide doped with tin) films were deposited on glass substrates by using ITO pellet with a composition of 90 wt.% In2O3 and 10 wt.% SnO2 without extra heating. The post annealing process was done in vacuum with different annealing temperature at 100  200  300 and 400C for 2 hours  respectively. The effects of vacuum annealing on structural  optical and electrical properties of the ITO film deposited by RLVIP were studied in detail. The results showed that the crystalline of the film was improved with the higher temperature. The increase of the annealing temperature improved the infrared reflectivity from 30% to 80% over 8-14m of the infrared atmosphere window  and a simultaneous variation in the optical transmission of the visible spectral region occurred. In addition  sheet resistance of ITO films had contrary changing trend with the IR reflectance  as well.