机构

• 长春光学精密机械与物... [2]
• 苏州纳米技术与纳米仿... [1]
• 化学研究所 [1]
• 植物研究所 [1]

采集方式

• OAI收割 [5]

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浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Two independent allohexaploidizations and genomic fractionation in Solanales 期刊论文  OAI收割 FRONTIERS IN PLANT SCIENCE, 2022, 卷号: 13 作者:  Zhang, Yan;  Zhang, Lan;  Xiao, Qimeng;  Wu, Chunyang;  Zhang, Jiaqi   |  收藏  |  浏览/下载：10/0  |  提交时间：2024/03/07 Solanaceae  Convolvulaceae  polyploidization  genomic fractionation  chromosomal structural variation  BMY genes  keywordbelowspace-30pt   A round robin study of polymer solar cells and small modules across China 期刊论文  OAI收割 SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 卷号: 117, 页码: 382-389 作者:  Larsen-Olsen, Thue T.;  Gevorgyan, Suren A.;  Sondergaard, Roar R.;  Hosel, Markus;  Gu, Zhouwei   |  收藏  |  浏览/下载：79/0  |  提交时间：2019/04/09 Round Robin  Polymer Solar Cells  15 Chinese Laboratories  30% Variation  Inherent Variability   A round robin study of polymer solar cells and small modules across China 期刊论文  OAI收割 SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 卷号: 117, 期号: SI, 页码: 382-389 作者:  Chen, LW(陈立桅) 收藏  |  浏览/下载：25/0  |  提交时间：2013/12/31 Round robin  Polymer solar cells  15 Chinese laboratories  30% variation  Inherent variability   Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Zhang Z.-W. 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25 The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit  the luminous uniformity has great improved  but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED  such as low field effect mobility  low output current and threshold voltage shift. In this article  a two-a-Si:H TFT pixel circuit was designed  which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing  the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments  the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal  the variety of Vth  is smallest  about 1.28V after a fixed stressing time of 1.33104min  which shows the novel data signal timing can improved the driving TFT output-input current stability.   Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique (EI CONFERENCE) 会议论文  OAI收割 ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang X.;  Wang X.;  Wang X.;  Zheng X.;  Gao J. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 With reactive low voltage ion plating technique  ITO (indium oxide doped with tin) films were deposited on glass substrates by using ITO pellet with a composition of 90 wt.% In2O3 and 10 wt.% SnO2 without extra heating. The post annealing process was done in vacuum with different annealing temperature at 100  200  300 and 400C for 2 hours  respectively. The effects of vacuum annealing on structural  optical and electrical properties of the ITO film deposited by RLVIP were studied in detail. The results showed that the crystalline of the film was improved with the higher temperature. The increase of the annealing temperature improved the infrared reflectivity from 30% to 80% over 8-14m of the infrared atmosphere window  and a simultaneous variation in the optical transmission of the visible spectral region occurred. In addition  sheet resistance of ITO films had contrary changing trend with the IR reflectance  as well.