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长春光学精密机械与... [17]
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Tungsten disulfide passively Q-switched Nd:GdNbO4 laser under 879 nm direct pumping
期刊论文
OAI收割
INFRARED PHYSICS & TECHNOLOGY, 2021, 卷号: 112
作者:
Ma, Yufei
;
Dang, Hongtao
;
Ding, Shoujun
;
Zheng, Xiaohai
;
Zhang, Qingli
  |  
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2021/04/26
Nd:GdNbO4
WS2
879 nm pumping
passively Q-switching
LD pumped 1347 nm laser with a novel Nd:GdNbO4 crystal
期刊论文
OAI收割
INFRARED PHYSICS & TECHNOLOGY, 2018, 卷号: 94, 页码: 32-37
作者:
Yan, Renpeng
;
Zhao, Chuang
;
Li, Xudong
;
Yu, Xin
;
Liu, Zhixiang
  |  
收藏
  |  
浏览/下载:69/0
  |  
提交时间:2019/01/11
Diode-pumped
Direct pumping
Nd:GdNbO4
1347 nm
一种氮化碳膜电极光电催化氧化去除水中氰银络合物同时回收银离子的方法
专利
OAI收割
专利号: CN107651732A, 申请日期: 2018-02-02, 公开日期: 2018-02-02
作者:
赵旭
;
齐璠静
  |  
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2019/11/27
一种氮化碳膜电极光电催化氧化去除水中氰银络合物同时回收银离子的方法,其特征在于:(1)将三聚氰酸与苯并胍胺以摩尔比6:1加乙醇溶解并搅拌20小时,干燥后将所得到的白色粉末均匀覆盖到导电玻璃上,煅烧2小时,制备得到g#C3N4膜电极
(2)制备好的g#C3N4电极为工作电极,钛片或者不锈钢板作为对电极,饱和甘汞电极作为参比电极,在一石英光电催化反应器中,在波长大于420nm的可见光照射到g#C3N4电极,光电催化氧化氰银络合物,在氰根离子得到氧化去除的同时,释放的银离子在阳极与阴极沉积,得到回收利用。
Efficient Nd:YVO4 laser in-band pumped by wavelength-locked 913.9-nm laser diode and Q-switch operation
期刊论文
OAI收割
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 2
作者:
Li Bin
;
Lei Peng
;
Sun Bing
;
Bai YangBo
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2021/02/02
UP-CONVERSION
ND-YAG
EMITTING LEVEL
HIGH-POWER
888 NM
ND-YVO4
CRYSTALS
in-band pumped
Nd:YVO4 laser
1064 nm
Q-switched
340 W Nd:YVO4 Innoslab laser oscillator with direct pumping into the lasing level
期刊论文
OAI收割
LASER PHYSICS LETTERS, 2014, 卷号: 11, 期号: 11, 页码: 115809
作者:
Xu L
;
He JL
;
Xin JG
;
Xu, L (reprint author), Beijing Inst Technol, Sch Optoelect, Beijing 100081, Peoples R China.
;
Mao YF
  |  
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2015/01/04
Laser Diode Stack
1064 Nm
Dual-end-pumped
Nd:Yvo4
Innoslabm
SnS nanostructures prepared by simple film technique: Catalyst-free vacuum thermal evaporation
期刊论文
OAI收割
Micro and Nano Letters, 2014, 卷号: 9, 期号: 1, 页码: 34-36
作者:
Li, Jin
;
Wang, Shengfeng
;
Jian, Jikang
;
Sun, Yanfei
;
Xu, Jinbao
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2014/11/11
nanostructured materials
photoluminescence
scanning electron microscopy
tin compounds
transmission electron microscopy
vacuum deposition
X-ray diffraction
tin chips
starting materials
scanning electron microscopy
transmission electron microscopy
high-resolution TEM
as-prepared products
X-ray diffraction
orthorhombic phase
photoluminescence spectra
emission bandcentres
visible light emitter
infrared light emitter
optical devices
nanostructures
simple film technique
catalyst-free vacuum thermal evaporation
wavelength 555
4 nm
electron volt energy 2
24 eV
electron volt energy 1
58 eV
wavelength 785 nm
SnS
Application of interferometry measurement in large-scale optic-electrical theodolite (EI CONFERENCE)
会议论文
OAI收割
2012 International Conference on Sensors, Measurement and Intelligent Materials, ICSMIM 2012, December 26, 2012 - December 27, 2012, Guilin, China
作者:
Sun Z.
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2013/03/25
Interferometry is a very important method in high accuracy measurement for optical system. This article briefly introduced the conception of interferometry and took a product of 4D Technology as an example to carry on the measurement. A large-scale optic-electrical Theodolite in assemblage was measured
and its primary mirror was 400mm in diameter. With the analysis of the results
some micro adjustments of the mechanical structure proceed
and it made the system perform better. The final results of the whole system is 1.061 in P-V value and 0.1136 in RMS value (=632.8nm)
this meets the demand of optical design and practical application. The result demonstrates that interferometry is a good way to be utilized and optimize in the procedure of assemble. (2013) Trans Tech Publications
Switzerland.
Influence of high temperature annealing in nitrogen on upconversion luminescence of -NaYF4: Yb3+, Er3+ hexagonal sub-microplates (EI CONFERENCE)
会议论文
OAI收割
2012 International conference on Function Materials and Nanotechnology, FMN 2012, May 19, 2012 - May 20, 2012, Zhengzhou, China
作者:
Zhao J.
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2013/03/25
The pure -NaYF4: Yb3+
Er3+ hexagonal sub-microplates were successfully prepared by the combination of coprecipitation and hydrothermal methods using sodium citrate as chelator. The size of them is about 600 nm 400 nm (side length thickness). The obtained sample was divided into two parts and one of them was annealed in nitrogen at 300 C for 2 hours. The crystal structure of the -NaYF4: Yb3+
Er3+ hexagonal sub-microplates before and after annealing treatment is hexagonal phase. Under the excitation of 980 nm diode laser
the upconversion luminescence intensity the sample after annealing is much stronger than that of the sample without annealing treatment. High temperature annealing process improved the crystallization of the sample
resulting in the decrease of the nonradiative relaxation and the enhancement of the upconversion luminescence. (2012) Trans Tech Publications
Switzerland.
Synthesis, characterization, and luminescent properties of a red-emitting Europium complex (EI CONFERENCE)
会议论文
OAI收割
1st International Conference on Energy and Environmental Protection, ICEEP 2012, June 23, 2012 - June 24, 2012, Hohhot, China
作者:
Li B.
;
Zhang L.
;
Zhang L.
;
Li B.
;
Li B.
收藏
  |  
浏览/下载:78/0
  |  
提交时间:2013/03/25
a fluorine functionalized 1
10-phenanthroline ligand
3-ethyl-2-(2- fluorophenyl) imidazo[4
5-f]1
10-phenanthroline(EFPIP) and the corresponding red-emitting Eu(III) complex Eu(DBM)3(EFPIP) (DBM = dibenzoylmethanate) was synthesized and the photophysical properties and electroluminescent(EL) performances were researched. When Eu(DBM) 3(EFPIP) was used as emitting material in organic devices
the maximum efficiency and luminance of red emission achieved from the EL device with the configuration of ITO/m-MTDATA (30 nm)/NPB (20 nm)/x wt% Eu(DBM) 3(EFPIP) doped in CBP (30 nm)/Bphen (20 nm)/Alq3 (20 nm)/LiF (0.8 nm)/Al were 3.6 cd/A and 563 cd/m2
respectively. Compared with the previously reported devices based on methyl or chlorine substitute Eu(III) complexes
the EL performances of the device using Eu(DBM)3(EFPIP) as an emitter was significantly enhanced due to the introduction of fluorine. (2012) Trans Tech Publications
Switzerland.
LD end-pumped c-cut Nd:YVO(4) laser at 589 nm generated by sef-Raman conversion and frequency doubling
期刊论文
OAI收割
Acta Physica Sinica, 2011, 卷号: 60, 期号: 9
H. Y. Zhu
;
G. Zhang
;
Y. J. Zhang
;
C. H. Huang
;
Y. M. Duan
;
Y. Wei
;
P. F. Wei
;
Y. L. Yu
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2012/06/06
Raman laser
c-cut Nd:YVO(4)
589 nm
yellow laser
d-2 resonance radiation
continuous-wave
yellow-light
ndyag laser
operation
yvo4