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	SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响期刊论文 OAI收割发光学报, 2012, 期号: 08, 页码: 879-882 作者: 宋航; 陈一仁; 孙晓娟; 黎大兵; 蒋红收藏 \| 浏览/下载：15/0 \| 提交时间：2013/03/11 SiO2纳米颗粒 a-AlGaN MSM紫外探测器
	Synthesis and luminescence properties of Eu3+-doped silicate nanomaterial (EI CONFERENCE) 会议论文 OAI收割 17th International Conference on Dynamical Processes in Excited States of Solids, DPC'10, June 20, 2010 - June 25, 2010, Argonne, IL, United states 作者: Zhang J.; Zhang J.; Zhang J. 收藏 \| 浏览/下载：29/0 \| 提交时间：2013/03/25 In this paper we introduce a sol-gel process for preparing Y 2Si2O7: Eu3+ nanocrystals. The rare earth compounds were dispersed in the SiO2 colloids and the monodisperse nano-scale composite materials were prepared. The reactant mass fraction and heat treatment temperatures could affect the structures and emission spectrum properties of as-synthesized samples. The samples emit the strong red light upon excitation under the ultraviolet. The main peaks originate from 5D0-7F2 electric dipole transition of Eu3+. With regard to the samples treated at different temperatures the emission spectra obtained under 266 nm excitation show different shapes of spectra lines and relative intensities indicating that the Eu3+ ions have been located in different local environments. 2011 Published by Elsevier B.V.
	The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者: Wang C. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.
	高能Xe离子辐照引起的注碳a:SiO_2中新结构的形成期刊论文 OAI收割原子核物理评论, 2006, 卷号: 2006, 期号: 02, 页码: 189-193 赵志明; 王志光; 宋银; 金运范; 孙友梅 \| 收藏 \| 浏览/下载：28/0 \| 提交时间：2010/10/29 离子注入高能离子辐照 a:Sio2 新结构
	Microstructure of a-SiOx : H 期刊论文 OAI收割 science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 10, 页码: 1320-1328 Wang YQ; Liao XB; Diao HW; Cheng WC; Li GH; Chen CY; Zhang SB; Xu YY; Chen WD; Kong GL 收藏 \| 浏览/下载：46/0 \| 提交时间：2010/08/12 a-SiOx : H microstructure bonding configuration CHEMICAL-VAPOR-DEPOSITION AMORPHOUS-SILICON ELECTRONIC-PROPERTIES SIO2/SI INTERFACE OXYGEN FILMS VIBRATIONS ALLOYS SYSTEM
	The microstructure and its high-temperature annealing behaviours of a-Si : O : H film 期刊论文 OAI收割 acta physica sinica, 2001, 卷号: 50, 期号: 12, 页码: 2418-2422 Wang YQ; Chen CY; Chen WD; Yang FH; Diao HW 收藏 \| 浏览/下载：94/6 \| 提交时间：2010/08/12 a-Si : O : H nc-Si microstructure annealing CHEMICAL-VAPOR-DEPOSITION AMORPHOUS SIO2 OPTICAL-PROPERTIES SILICON