机构

• 长春光学精密机械与物... [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [2]

内容类型

• 会议论文 [2]

发表日期

• 2007 [1]
• 1998 [1]

学科主题

• 半导体物理 [1]

筛选

浏览/检索结果: 共2条，第1-2条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology  the devices have been fabricated in experiment  and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W  and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.   The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers 会议论文  OAI收割 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Huang YZ 收藏  |  浏览/下载：21/0  |  提交时间：2010/10/29 vertical-cavity lasers  spontaneous emission factor  laser modes  AlAs oxidation