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	Influences of Applied Shear Stress on the Nucleation and Micro-texture Formation of a Phase in Ti-6Al-4V Alloy 期刊论文 OAI收割 RARE METAL MATERIALS AND ENGINEERING, 2020, 卷号: 49, 期号: 3, 页码: 939-943 作者: Zhang Jinhu; Xu Dongsheng; Teng Chunyu; Wang Hao; Li Xuexiong \| 收藏 \| 浏览/下载：19/0 \| 提交时间：2021/02/02 applied shear stress micro-texture phase field simulation
	Vacuum tribological properties of a-C:H film in relation to internal stress and applied load 期刊论文 OAI收割 Tribology International, 2014, 卷号: 71, 页码: 82-87 作者: Wu YX(吴艳霞); Li HX(李红轩); Ji L(吉利); Ye YP(冶银平); Chen JM(陈建敏) 收藏 \| 浏览/下载：31/0 \| 提交时间：2013/12/05 Amorphous hydrogenated carbon film Vacuum friction Internal stress Applied load
	Effects of Surface State and Applied Stress on Stress Corrosion Cracking of Alloy 690TT in Lead-containing Caustic Solution 期刊论文 OAI收割 Journal of Materials Science & Technology, 2012, 卷号: 28, 期号: 9, 页码: 785-792 Z. M. Zhang; J. Q. Wang; E. H. Han; W. Ke 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/02/05 Alloy 690TT Surface state Applied stress Stress corrosion cracking environmentally assisted cracking short-circuit diffusion high-temperature water chromium depletion pressurized-water steam initiation oxidation mechanism nickel
	The microstructural instability of a hot corrosion resistant superalloy during long-term exposure 期刊论文 OAI收割 Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing, 2008, 卷号: 498, 期号: 1-2, 页码: 349-358 J. S. Hou; J. T. Guo; G. X. Yang; L. Z. Zhou; X. Z. Qin; H. Q. Ye 收藏 \| 浏览/下载：18/0 \| 提交时间：2012/04/13 Microstructural instability Long-term exposure Applied stress Topologically close-packed phase Activation energy Structural analysis nickel-base superalloys high-temperature creep single-crystals precipitation mechanism systems alloys stress phase
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
	Repetitive nano second-pulse breakdown in tip-plane gaps of air 期刊论文 iSwitch采集 Ieee transactions on plasma science, 2006, 卷号: 34, 期号: 5, 页码: 1620-1625 作者: Shao, Tao; Sun, Guangsheng; Yan, Ping; Zhang, Shichang 收藏 \| 浏览/下载：26/0 \| 提交时间：2019/05/10 Gas breakdown Memory effect Nanosecond breakdown Number of applied pulses Repetitive pulse stress time Tip-plane geometry
	Output-power controllable erbium-doped fibre laser via a high-birefringence fibre loop mirror with applied stress 期刊论文 OAI收割 CHINESE PHYSICS, 2005, 卷号: 14, 页码: 991-994 作者: Lin, YG; Feng, XH; Li, Y; Yuan, SZ; Zhang, WG \| 收藏 \| 浏览/下载：18/0 \| 提交时间：2018/05/31 erbium-doped fibre laser high-birefringence fibre loop mirror applied stress