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	Mechanical, Microstructural and Tribological Properties of Reactive Magnetron Sputtered Cr-Mo-N Films 期刊论文 OAI收割 Journal of Materials Science & Technology, 2015, 卷号: 31, 期号: 1, 页码: 55-64 D. L.; Lei Qi, H.; Wang, T. G.; Pei, Z. L.; Gong, J.; Sun, C. 收藏 \| 浏览/下载：28/0 \| 提交时间：2015/05/08 Cr-Mo-N films DC magnetron sputtering Hardness Critical load Friction coefficient Wear nitride thin-films substrate bias nitrogen flow coatings hardness temperature pvd modulus ratio dc
	Effect of electromagnetic swirling flow in slide-gate SEN on flow field in square billet continuous casting mold 期刊论文 OAI收割 ACTA METALLURGICA SINICA-ENGLISH LETTERS, 2012, 卷号: 25, 期号: 5, 页码: 347-356 作者: Geng Dianqiao; Lei Hong; He Jicheng; Liu Haitao \| 收藏 \| 浏览/下载：21/0 \| 提交时间：2021/02/02 SUBMERGED ENTRY NOZZLE MOLTEN STEEL FLOW IMMERSION NOZZLE FLUID-FLOW NUMERICAL-SIMULATION TURBULENT-FLOW HEAT-TRANSFER TEMPERATURE DISTRIBUTION MODEL SLAB Square billet Electromagnetic swirling flow Slide-gate SEN Continuous casting Bias flow
	Optimized Cr-nitride film on 316L stainless steel as proton exchange membrane fuel cell bipolar plate 期刊论文 OAI收割 international journal of hydrogen energy, 2009, 卷号: 34, 期号: 1, 页码: 453-458 作者: Fu, Yu; Lin, Guoqiang; Hou, Ming; Wu, Bo; Li, Hongkai 收藏 \| 浏览/下载：26/0 \| 提交时间：2010/11/30 Metal bipolar plate Pulsed bias arc ion plating Flow rate of N(2)
	Deposition of thick TiAlN coatings on 2024 Al/SiC(p) substrate by Arc ion plating 期刊论文 OAI收割 Surface & Coatings Technology, 2008, 卷号: 202, 期号: 21, 页码: 5170-5174 S. S. Zhao; H. Du; J. D. Zheng; Y. Yang; W. Wang; J. Gong; C. Sun 收藏 \| 浏览/下载：26/0 \| 提交时间：2012/04/13 gradient TiAlN coating (ti Al/SiC(p) substrate al)n coatings arc ion plating nitrogen flow rate cathodic vacuum-arc hard coatings cutting tools films pressure performance contact bias
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
	Influence of quantity and energy of the particles in gas phase on nucleation of the HFCVD of diamond films 期刊论文 OAI收割 Materials Letters, 2001, 卷号: 48, 期号: 1, 页码: 41135 G. H. Song; C. Sun; B. Wang; A. Y. Wang; R. F. Huang; L. S. Wen 收藏 \| 浏览/下载：15/0 \| 提交时间：2012/04/14 diamond film hot filament chemical vapor deposition (HFCVD) nucleation density mass current density substrate bias chemical-vapor-deposition amorphous-carbon initial growth flow rate mechanism