机构

• 长春光学精密机械与物... [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [2]

内容类型

• 会议论文 [1]
• 期刊论文 [1]

发表日期

• 2007 [1]
• 1999 [1]

学科主题

• 半导体物理 [1]

筛选

浏览/检索结果: 共2条，第1-2条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 Pulsed anodic oxidation technique  a new way of forming current blocking layers  was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer  which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.   High-speed and high-power 1.3 mu m InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions 期刊论文  OAI收割 japanese journal of applied physics part 1-regular papers short notes & review papers, 1999, 卷号: 38, 期号: 12a, 页码: 6729-6731 Zhang BJ; Yi MB; Song JF; Gao DS; Zhu NH; Wu RH; Wang W 收藏  |  浏览/下载：50/0  |  提交时间：2010/08/12 semiconductor laser  heterostructure  proton bombardment  modulation bandwidth  MOCVD  CURRENT BLOCKING LAYERS  INNER-STRIPE LASERS