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Laterally Expanded Rylene Diimides with Uniform Branched Side Chains for Solution-Processed Air Stable n-Channel Thin Film Transistors 期刊论文  OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2014, 卷号: 6, 期号: 20, 页码: 18098-18103
作者:  
Xiao, Chengyi;  Jiang, Wei;  Li, Xiangguang;  Hao, Linxiao;  Liu, Chunming
  |  收藏  |  浏览/下载:35/0  |  提交时间:2019/04/09
A novel bottom-emitting vcsel's one-dimension array (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:  
Wang L.;  Wang L.;  Wang L.;  Liu Y.;  Liu Y.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200m  150m and 100m-diameter  with the center spacings of 300m and 250m respectively. The maximum power is 880mW at a current of 4A  corresponding to lKW/cm2 average optical power density. The differential resistance is 0.09 with a threshold of 0.56A. The novel array is compared with a 300m-aperture-size single device and a 44 2-D array with 50m element aperture size and 250m centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power  threshold current  lasing spectra  far-field distribution etc. 2008 SPIE.