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金属研究所 [4]
力学研究所 [1]
长春光学精密机械与物... [1]
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期刊论文 [7]
会议论文 [1]
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High-temperature failure mechanism and defect sensitivity of TC17 titanium alloy in high cycle fatigue
期刊论文
OAI收割
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2022, 卷号: 122, 页码: 128-140
作者:
Li, Gen
;
Sun, Chengqi
;
Sun CQ(孙成奇)
  |  
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2022/06/10
TC17 titanium alloy
High temperature
Defect
High cycle fatigue
Oxygen-rich layer
Rough area
Defect-rich graphene stabilized atomically dispersed Cu-3 clusters with enhanced oxidase-like activity for antibacterial applications
期刊论文
OAI收割
APPLIED CATALYSIS B-ENVIRONMENTAL, 2022, 卷号: 301, 页码: 7
作者:
Meng, FanChi
;
Peng, Mi
;
Chen, Yunlei
;
Cai, Xiangbin
;
Huang, Fei
  |  
收藏
  |  
浏览/下载:81/0
  |  
提交时间:2022/01/27
Atomic dispersion
Cu cluster
Defect-rich graphene
Oxidase-like activity
Antibacterial
Cooperative Sites in Fully Exposed Pd Clusters for Low-Temperature Direct Dehydrogenation Reaction
期刊论文
OAI收割
ACS CATALYSIS, 2021, 卷号: 11, 期号: 18, 页码: 11469-11477
作者:
Wang, Linlin
;
Diao, Jiangyong
;
Peng, Mi
;
Chen, Yunlei
;
Cai, Xiangbin
  |  
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2021/11/22
atomic dispersion
Pd cluster
defect-rich graphene
dehydrogenation
heterogeneous catalysis
Cooperative Sites in Fully Exposed Pd Clusters for Low-Temperature Direct Dehydrogenation Reaction
期刊论文
OAI收割
ACS CATALYSIS, 2021, 卷号: 11, 期号: 18, 页码: 11469-11477
作者:
Wang, Linlin
;
Diao, Jiangyong
;
Peng, Mi
;
Chen, Yunlei
;
Cai, Xiangbin
  |  
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2021/11/22
atomic dispersion
Pd cluster
defect-rich graphene
dehydrogenation
heterogeneous catalysis
N-Doped carbon coating enhances the bifunctional oxygen reaction activity of CoFe nanoparticles for a highly stable Zn-air battery
期刊论文
OAI收割
JOURNAL OF MATERIALS CHEMISTRY A, 2020, 卷号: 8, 期号: 40, 页码: 21189-21198
作者:
Liu, Q
;
Liu, X
;
Xie, Y
;
Sun, FF
;
Liang, ZJ
  |  
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2021/09/06
LAYERED DOUBLE HYDROXIDE
DEFECT-RICH
EFFICIENT
ELECTROCATALYSTS
REDUCTION
CATALYSTS
NITRIDE
NANOSHEETS
RU
Tin-Assisted Fully Exposed Platinum Clusters Stabilized on Defect-Rich Graphene for Dehydrogenation Reaction
期刊论文
OAI收割
ACS CATALYSIS, 2019, 卷号: 9, 期号: 7, 页码: 5998-6005
作者:
Zhang, Jiayun
;
Deng, Yuchen
;
Cai, Xiangbin
;
Chen, Yunlei
;
Peng, Mi
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/02/02
atomic dispersion
defect-rich graphene
Pt nanocluster
dehydrogenation
heterogeneous catalysis
Boosted Electrocatalytic N-2 Reduction to NH3 by Defect-Rich MoS2 Nanoflower
期刊论文
OAI收割
ADVANCED ENERGY MATERIALS, 2018, 卷号: 8, 期号: 30, 页码: 1801357
作者:
  |  
收藏
  |  
浏览/下载:79/0
  |  
提交时间:2019/10/11
artificial N-2 fixation
defect-rich MoS2
density functional theory
electrocatalysis
NH3
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE)
会议论文
OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.
;
Gao W.
;
Liao Y.
;
Jing H.
;
Fu G.
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress
it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping
a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper
controlling different flow ratio of source gas SiH4 and NH3
and a great deal of tests (ellipsometer
infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators
three different capacitance samples in MIS structure were done
degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation
this result indicated that the defect density of this type SiN x was smaller
and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT
SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.