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浏览/检索结果: 共8条,第1-8条 帮助

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High-temperature failure mechanism and defect sensitivity of TC17 titanium alloy in high cycle fatigue 期刊论文  OAI收割
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2022, 卷号: 122, 页码: 128-140
作者:  
Li, Gen;  Sun, Chengqi;  Sun CQ(孙成奇)
  |  收藏  |  浏览/下载:43/0  |  提交时间:2022/06/10
Defect-rich graphene stabilized atomically dispersed Cu-3 clusters with enhanced oxidase-like activity for antibacterial applications 期刊论文  OAI收割
APPLIED CATALYSIS B-ENVIRONMENTAL, 2022, 卷号: 301, 页码: 7
作者:  
Meng, FanChi;  Peng, Mi;  Chen, Yunlei;  Cai, Xiangbin;  Huang, Fei
  |  收藏  |  浏览/下载:81/0  |  提交时间:2022/01/27
Cooperative Sites in Fully Exposed Pd Clusters for Low-Temperature Direct Dehydrogenation Reaction 期刊论文  OAI收割
ACS CATALYSIS, 2021, 卷号: 11, 期号: 18, 页码: 11469-11477
作者:  
Wang, Linlin;  Diao, Jiangyong;  Peng, Mi;  Chen, Yunlei;  Cai, Xiangbin
  |  收藏  |  浏览/下载:61/0  |  提交时间:2021/11/22
Cooperative Sites in Fully Exposed Pd Clusters for Low-Temperature Direct Dehydrogenation Reaction 期刊论文  OAI收割
ACS CATALYSIS, 2021, 卷号: 11, 期号: 18, 页码: 11469-11477
作者:  
Wang, Linlin;  Diao, Jiangyong;  Peng, Mi;  Chen, Yunlei;  Cai, Xiangbin
  |  收藏  |  浏览/下载:43/0  |  提交时间:2021/11/22
N-Doped carbon coating enhances the bifunctional oxygen reaction activity of CoFe nanoparticles for a highly stable Zn-air battery 期刊论文  OAI收割
JOURNAL OF MATERIALS CHEMISTRY A, 2020, 卷号: 8, 期号: 40, 页码: 21189-21198
作者:  
Liu, Q;  Liu, X;  Xie, Y;  Sun, FF;  Liang, ZJ
  |  收藏  |  浏览/下载:24/0  |  提交时间:2021/09/06
Tin-Assisted Fully Exposed Platinum Clusters Stabilized on Defect-Rich Graphene for Dehydrogenation Reaction 期刊论文  OAI收割
ACS CATALYSIS, 2019, 卷号: 9, 期号: 7, 页码: 5998-6005
作者:  
Zhang, Jiayun;  Deng, Yuchen;  Cai, Xiangbin;  Chen, Yunlei;  Peng, Mi
  |  收藏  |  浏览/下载:29/0  |  提交时间:2021/02/02
Boosted Electrocatalytic N-2 Reduction to NH3 by Defect-Rich MoS2 Nanoflower 期刊论文  OAI收割
ADVANCED ENERGY MATERIALS, 2018, 卷号: 8, 期号: 30, 页码: 1801357
作者:  
  |  收藏  |  浏览/下载:79/0  |  提交时间:2019/10/11
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.