机构

• 物理研究所 [2]
• 长春光学精密机械与物... [1]
• 新疆天文台 [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2025 [1]
• 2013 [1]
• 2008 [1]
• 2005 [1]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Novel X@g-C3N4/GaP3 (X = S, Se) heterostructures for photocatalytic overall water splitting with Z-scheme 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2025, 卷号: 685, 页码: 162045 作者:  Shi, Wen-Jie;  Yang, Chuan-Lu;  Li, Xiaohu;  Liu, Yuliang;  Zhao, Wenkai   |  收藏  |  浏览/下载：3/0  |  提交时间：2025/02/27 Z -scheme  Doped heterostructure  Non-adiabatic  Water splitting  Photocatalytic   Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：43/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   Temperature-dependent transport properties in oxide p-n junction above room temperature 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 6, 页码: 2209 Liu, GZ; Jin, KJ; He, M; Qiu, J; Xing, J; Lu, HB; Yang, GZ 收藏  |  浏览/下载：23/0  |  提交时间：2013/09/23 DOPED SRTIO3  HETEROJUNCTIONS  HETEROSTRUCTURE   Positive colossal magnetoresistance from interface effect in p-n junction of La0.9Sr0.1MnO3 and SrNb0.01Ti0.99O3 期刊论文  OAI收割 PHYSICAL REVIEW B, 2005, 卷号: 71, 期号: 18 Jin, KJ; Lu, HB; Zhou, QL; Zhao, K; Cheng, BL; Chen, ZH; Zhou, YL; Yang, GZ 收藏  |  浏览/下载：28/0  |  提交时间：2013/09/24 MAGNETIC TUNNEL-JUNCTIONS  ELECTRONIC-STRUCTURE  MANGANESE PEROVSKITES  TRILAYER JUNCTIONS  STRONTIUM-TITANATE  DOPED SRTIO3  TEMPERATURE  LA1-XSRXMNO3  SURFACE  HETEROSTRUCTURE