机构

• 金属研究所 [1]
• 长春光学精密机械与物... [1]
• 上海应用物理研究所 [1]
• 长春应用化学研究所 [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2019 [1]
• 2011 [1]
• 2006 [1]
• 2004 [1]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Miscibility Matching and Bimolecular Crystallilation Affording High-Performance Ternary Nonfullerene Solar Cells 期刊论文  OAI收割 CHEMISTRY OF MATERIALS, 2019, 卷号: 31, 期号: 24, 页码: 10211-10224 作者:  Yi, N;  Ai, QY;  Zhou, WH;  Huang, LQ;  Zhang, LF   |  收藏  |  浏览/下载：34/0  |  提交时间：2020/10/16 ENHANCED PERFORMANCE  POLYMER  MORPHOLOGY  FULLERENE  CRYSTALLIZATION  EFFICIENCY  THERMODYNAMICS  SENSITIZATION  COMPATIBILITY  BLENDS   Relation between icosahedral short-range ordering and plastic deformation in Zr-Nb-Cu-Ni-Al bulk metallic glasses 期刊论文  OAI收割 Acta Materialia, 2011, 卷号: 59, 期号: 7, 页码: 2814-2822 Z. W. Zhu; L. Gu; G. Q. Xie; W. Zhang; A. Inoue; H. F. Zhang; Z. Q. Hu 收藏  |  浏览/下载：28/0  |  提交时间：2012/04/13 Bulk metallic glasses  Plastic deformation  Free volume  Crystallization  Icosahedral short-range ordering  transmission electron-microscopy  room-temperature  mechanical-properties  amorphous-alloys  compressive plasticity  enhanced plasticity  forming ability  atomic packing  free-volume  composites   Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏  |  浏览/下载：39/0  |  提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.   Influence of shear on polypropylene crystallization kinetics 期刊论文  OAI收割 european physical journal e, 2004, 卷号: 15, 期号: 2, 页码: 167-175 Huo H; Meng YF; Li HF; Jiang SC; An LJ 收藏  |  浏览/下载：243/81  |  提交时间：2010/08/17 FLOW-INDUCED CRYSTALLIZATION  ISOTACTIC POLYPROPYLENE  ENHANCED CRYSTALLIZATION  POLYMER CRYSTALLIZATION  POLY(ETHYLENE OXIDE)  ELONGATIONAL FLOW  STRESS-RELAXATION  PHYSICAL GELATION  NUCLEATING-AGENT  MOLECULAR-WEIGHT