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CAS IR Grid
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长春光学精密机械与物... [2]
金属研究所 [1]
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OAI收割 [3]
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会议论文 [2]
期刊论文 [1]
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2020 [1]
2009 [1]
2005 [1]
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Formation of long-period stacking-ordered (LPSO) structures and microhardness of as-cast Mg-4.5Zn-6Y alloy
期刊论文
OAI收割
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2020, 卷号: 777, 页码: 8
作者:
Mao, Pingli
;
Xin, Yan
;
Han, Ke
;
Liu, Zheng
;
Yang, Zhiqing
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2021/02/02
Magnesium alloy
Long-period stacking-ordered structure
Formation and growth mechanism
Transmission electron microscopy (TEM)
Study on the influence and disposal method of the micro-cracks of optical components (EI CONFERENCE)
会议论文
OAI收割
4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, November 19, 2008 - November 21, 2008, Chengdu, China
作者:
Xuan B.
;
Xie J.-J.
;
Xie J.-J.
;
Zhang H.
;
Zhang H.
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2013/03/25
Micro-crack is one of the most effective factor to the intensity and service life of optical components. Owing to the micro-crack on surface
actual strength of optical components is reduced severely
even less than ten-percent of its theoretical strength. According to fracture mechanics
the mechanisms of the formation and propagation of micro-crack and the growth theory of sub-critical micro-crack are discussed in the paper firstly. Based on practice
an on-line test method disposing etching holes-the molecule-infiltrating method and the principles of acid-etching method disposing micro-crack are described. Followed by the demolishing mechanism of abrasives and a more reasonable removal redundancy of fine-grinding and polishing during
optical production is given by using abrasives in different-size orderly. 2009 SPIE.
Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE)
会议论文
OAI收割
Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China
Fan X. W.
;
Shan C. X.
;
Yang Y.
;
Zhang J. Y.
;
Liu Y. C.
;
Lu Y. M.
;
Shen D. Z.
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2013/03/25
CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time
the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration
the size of dots becomes larger and the density decreases
which is explained by virtue of the surface free energy.